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Method for depositing cyclic thin film

A deposition method and a thin film technology are applied in the direction of liquid coating devices, coatings, gaseous chemical plating, etc., which can solve the problems of reduced film performance and insulation properties, difficulty in forming, and difficulty in the fine structure of semiconductor devices, etc., to achieve The effect of excellent membrane properties

Active Publication Date: 2013-04-03
EUGENE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to realize the fine structure of highly integrated semiconductor devices
[0003] For example, a thinner insulating film is required to realize a fine structure, but if the insulating film is formed in a thin thickness, the film performance such as insulating characteristics is lowered
Also, it is becoming more and more difficult to form thin films with thin thickness while achieving excellent step coverage

Method used

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  • Method for depositing cyclic thin film
  • Method for depositing cyclic thin film
  • Method for depositing cyclic thin film

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Embodiment Construction

[0027] Hereinafter, embodiments according to the inventive concept of the present invention are described in more detail with reference to the accompanying drawings. However, the embodiments of the inventive concept of the present invention may be modified in various ways, and the scope and essence of the present invention should not be understood as being limited by the embodiments described below. The embodiments according to the inventive concept of the present invention are provided so that those skilled in the art can more fully understand the present invention. In the drawings, the same reference numerals refer to the same elements. In addition, various elements and regions are exemplarily shown in the drawings. Therefore, the present invention is not limited to the relative sizes or intervals shown in the drawings.

[0028] figure 1 It is a flowchart showing a method of depositing a ring-shaped thin film according to an embodiment of the present invention.

[0029] refer...

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Abstract

Provided is a method for depositing a cyclic thin film for providing an excellent film quality and step coverage. The method for depositing a cyclic thin film according to one embodiment of the present invention comprises: a deposition step for depositing a silicon on a substrate by injecting silicon precursors inside a chamber loaded with a substrate; a first purge step for removing unreacted silicon precursors and reaction byproducts from the inside of the chamber; a reaction step for forming the deposited silicon into an insulation film having a silicon by providing a first reaction gas inside the chamber; a insulation film deposition step for repeating a second purge step for removing unreacted reaction gas and the reaction byproducts from the inside of the chamber; ; and a densification step for densifying the insulation film having silicon formed by providing plasma atmosphere inside the chamber.

Description

Technical field [0001] The present invention relates to a method for depositing a ring-shaped thin film, and more specifically, to a method for depositing a ring-shaped thin film containing a silicon insulating film. Background technique [0002] In recent years, with the development of the semiconductor industry and the needs of users, electronic devices have become more highly integrated and high-performance. Therefore, semiconductor devices, which are core components of electronic devices, also require high integration and high performance. However, it is difficult to realize the fine structure of a highly integrated semiconductor device. [0003] For example, a thinner insulating film is required to realize a fine structure, but if the insulating film is formed with a thin thickness, film properties such as insulating properties are reduced. Likewise, it is increasingly difficult to form a thin film with a thin thickness while obtaining excellent step coverage. Summary of the...

Claims

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Application Information

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IPC IPC(8): H01L21/31H01L21/205
CPCH01L21/3211H01L21/02532C23C16/4554H01L21/02274H01L21/32105H01L21/0228B05D3/145H01L21/0262H01L21/0217H01L21/02164C23C16/401C23C16/345H01L21/02211
Inventor 金海元禹相浩
Owner EUGENE TECH CO LTD