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Test method for electrical properties of memristor component unit

A technology of characteristic testing and electrical characteristics, which is applied in the direction of instruments, measuring electronics, measuring devices, etc., can solve the problems that the measurement accuracy needs to be further improved, there is no test method, and the test method is single, so as to ensure consistency and accuracy, and the degree of automation High, compact overall structure

Active Publication Date: 2015-05-20
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, these memristor detection schemes in the prior art mainly focus on the analysis of the memristive characteristics of the device unit, but lack the analysis of other important electrical characteristics such as the multi-resistance characteristics of the memristor, the resistance state switching Effective detection of durability, retention characteristics, etc., the test method is relatively simple, not perfect, and the measurement accuracy needs to be further improved, and there is no relevant standard test system and its comprehensive and standardized test methods

Method used

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  • Test method for electrical properties of memristor component unit
  • Test method for electrical properties of memristor component unit
  • Test method for electrical properties of memristor component unit

Examples

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Embodiment 1

[0052] Since the DC I-V characteristic can intuitively reflect the overall electrical characteristics of the memristor, it is usually used as the first test step in the testing process. In this embodiment, the central control unit controls the source measurement unit to generate a voltage signal with increasing amplitude to measure the current corresponding to the memristor at this time through the test instruction. The voltage test range is -0.9V-0.9V, and the step of voltage increase The input value is 0.05V, the scanning mode is bidirectional scanning, and the current-voltage curve can be obtained by recording the corresponding voltage and current values ​​(such as Figure 2b shown). Through this test curve, the threshold voltage / current characteristics and resistance switching characteristics of the memristor device unit can be studied. Depend on Figure 2b It can be seen that the threshold voltage for resistance change of the memristor is 0.55V / -0.62V, and the high and ...

Embodiment 2

[0054] In this embodiment, the central control unit sends corresponding test instructions, and the DC I-V characteristic test in Embodiment 1 is changed to a multi-impedance state characteristic test under the pulse action of a memristor. The specific test parameters are as follows: positive and negative pulses The numbers are respectively set to 5 / 5, the pulse width is 1us / 800ns, the amplitude is 0.7V / -0.6V respectively, the rest are the same as in Example 1, and the corresponding pulse times and resistance values ​​are recorded to obtain the memristor device unit The multi-resistance characteristic curve (such as Figure 4 shown). Depend on Figure 4 It can be seen that under the action of a positive pulse, the resistance value of the memristor decreases from 10KΩ to 4KΩ in turn; under the action of a negative pulse, the resistance value returns from 4KΩ to 10KΩ, and there are multiple resistance state.

Embodiment 3

[0056] In this embodiment, the central control unit sends corresponding test instructions, and the DC I-V characteristic test in Embodiment 1 is changed to the resistance state switching rate and switching amplitude test of the memristor. The specific test parameters are as follows: the pulse amplitude It is set to 1V, the pulse width is increased from 2ns to 70ns in turn, and the step is 2ns, and the rest are the same as in Embodiment 1. Record the corresponding pulse width and resistance value to obtain the resistance state switching rate curve of the memristor device unit (such as Figure 5 shown); the pulse width is set to 1us, the pulse amplitude is sequentially increased from 400mV to 1V, and the step is 20mv, and the rest are the same as in Example 1. Record the corresponding pulse amplitude and resistance value to obtain the resistance of the memristor device State switching amplitude curve (such as Image 6 shown). Depend on Figure 5 It can be seen that under the p...

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Abstract

The invention discloses a test system for electrical properties of a memristor component unit. The test system for the electrical properties of the memristor component unit comprises a probe station, a pulse generator, a pulse generation module, a source-measurement unit, an oscilloscope and a central control unit. A probe of the probe station is used for electrically contacting electrodes of a test sample so as to carry out relevant tests; the pulse generator is used for generating voltage pulse signals, and measuring corresponding resistance value states of the test sample through the source-measurement unit; the pulse generation module is used for generating alternating current signals, and processing response conditions of the test sample through the oscilloscope; and the source-measurement unit is also used for executing test instructions of direct current I-V characteristic tests and retention tests except being used for measuring alternating current characteristics. The invention further discloses a corresponding test method for the electrical properties of the memristor component unit. By means of the test system and the test method for the electrical properties of the memristor component unit, comprehensive electrical properties of a memristor can be acquired through the method which is efficient and convenient to operate, measurement accuracy and automation degree can be improved, and meanwhile, strong test expansion capability can be achieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically relates to an electrical characteristic testing system and a testing method of a memristor device unit. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley first predicted the fourth passive circuit element besides resistors, capacitors, and inductors—memristor. Its basic feature is the ability to memorize the charge flowing through it and respond it with changes in resistance. Due to the advantages of small size, low power consumption, high speed, and non-volatility, memristors have become important candidates for next-generation non-volatile memories. In addition, the circuit characteristics, nonlinear resistive behavior, and charge memory of memristors have made memristors widely used in many fields such as materials, electronics, biology, chemistry, and computers. One of the hot spots of research. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00
Inventor 孙华军徐小华缪向水张金箭王青沙鹏李人杰
Owner HUAZHONG UNIV OF SCI & TECH
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