9 results about "Source–measurement unit" patented technology

The invention relates to the technical field of battery cells, in particular to a portable battery cell self-discharge rapid test system, which is used for screening batched battery cells, and comprises a test circuit of which the first end and the second end are used for being detachably connected with a to-be-tested battery cell; the high-precision source measurement unit is integrated in the test circuit and is used for applying micro-current pulse excitation to the to-be-tested battery cell and monitoring the voltage response of the to-be-tested battery cell; and the controller is electrically connected with the high-precision source measurement unit and is configured to control the high-precision source measurement unit to execute test operation, obtain multi-dimensional characteristic parameters of the to-be-tested battery cell, input the multi-dimensional characteristic parameters into a batch statistics-based normalized scoring model constructed in advance, obtain a quality score of the to-be-tested battery cell, and obtain the quality score of the to-be-tested battery cell. And classifying and screening the to-be-detected battery cells according to the quality scores of the to-be-detected battery cells in combination with the dynamic threshold values of the battery cells to obtain a final evaluation result of the to-be-detected battery cells. The technical problems that in the prior art, measurement is long in time consumption and prone to being affected by external environment factors are solved.

The invention discloses an automatic test equipment calibration method and system, electronic equipment and a medium, and belongs to the technical field of detection. A source measurement unit of the automatic test equipment comprises a PID module, the output end of the PID module is provided with a gain module, and the method comprises the following steps: measuring a transient electrical signal output by the source measurement unit; when the transient electrical signal overshoots relative to the reference electrical value and the overshoot percentage is higher than a first threshold value, or when the transient electrical signal undershoots relative to the reference electrical value and the undershoot percentage is lower than a second threshold value, the gain coefficient of the gain module is adjusted, the overshoot percentage is not higher than the first threshold value and the undershoot percentage is not lower than the second threshold value. In the automatic test equipment calibration process, the transient electrical signal output by the PID module is optimized by adjusting the gain coefficient of the gain module, fine calibration is achieved, core PID parameters do not need to be directly reconfigured, and the calibration flexibility is improved.

The utility model provides a field effect transistor circuit comprising a field effect transistor to be detected, which comprises a grid electrode to be detected, a source electrode to be detected and a leak electrode to be detected; each connecting field effect transistor comprises a connecting grid electrode, a connecting source electrode and a connecting drain electrode; wherein the to-be-detected drain electrode is electrically connected with the plurality of connecting drain electrodes to form a drain electrode current measuring end; the plurality of connecting grids are electrically connected with the plurality of connecting sources, the plurality of connecting grids, the to-be-measured grid and the to-be-measured source form an input end of set voltage, and when the plurality of connecting field-effect transistors are in a turn-off state and the to-be-measured field-effect transistors are in different states, the drain current of the to-be-measured field-effect transistors is measured at the measuring end. According to the utility model, a high-precision source measurement unit is not needed, and the measurement precision of the turn-off current of the field effect transistor can be improved under the condition of low cost.

The invention provides an integral summation type high-precision source measurement system and method, the source measurement system adopts discrete devices to build a power amplification module, the output can reach 100V and 1A, and the test requirements of high-power devices are met. A traditional source measurement system is poor in stability, a source measurement unit adopts a summation and integration structure, when a load suddenly changes, the system can be rapidly adjusted to a safe voltage / current value through a clamping circuit, an output value and a set value are kept consistent, the system stability is improved, the source measurement unit adopts a PXI 3U structure and can be inserted into a PXI case, and the system stability is improved. And a test system can be conveniently formed with other board cards. According to the technical scheme, the technical problems that in the prior art, a source measuring unit is not wide enough in output range, poor in system stability, large in size, poor in portability and not suitable for system integration are solved.

The invention relates to the technical field of semiconductors, and discloses a semiconductor material testing device and method, and the device comprises a parameter analyzer, the lower part of the parameter analyzer is provided with a connection assembly, and the right side of the parameter analyzer is provided with a protection storage assembly. The handles at the two ends of the integrated socket in the connecting assembly are pushed into the positioning grooves, so that the integrated socket forms a stable locking state. The test method comprises the following steps: controlling a source measurement unit to inject calibration current into a test loop by using a physical boundary condition with a stable locking state solidified; the static characteristic de-embedding processing module is used for establishing a static linear impedance mathematical model and extracting a static contact impedance constant and a static bias voltage, and in a formal test, the system performs de-embedding compensation calculation on an original response voltage by using the static contact impedance constant and the static bias voltage. The real electrical response voltage of the semiconductor material is restored, and the comprehensive protection performance of the testing device is improved.

The invention discloses a source measurement unit control method for improving a spider bee algorithm to guide reinforcement learning and optimize PID. The method comprises the following steps: setting initial parameters; calculating a system transfer function according to an actual SMU model, and building a simulation control model of the SMU system based on an MATLAB platform; an SWO algorithm is improved through multiple strategies, and an MISWO module is formed; the DDPG deep strengthening model is improved, and an IDDPG model is formed; the MISWO module and the IDDPG model are fused, an evolutionary reinforcement learning framework (ERL) is constructed, and online guidance of the MISWO algorithm on the IDDPG is formed; and the ERL is applied to the SMU system to realize PID control of the SMU. The SWO and the DDPG are improved in a targeted mode, the PID control performance is improved, the ERL structure algorithm can use a group search mechanism to make up for the limitation of a strategy gradient algorithm on global search, and therefore the control performance and robustness of an SMU system are improved.

The present application relates to the technical field of power supply system core device health management, and discloses a method for 1 / f noise test by using a source table, comprising: performing short-time pre-detection in a thermal equilibrium stage to obtain a first-order drift rate of current; constructing a thermal drift linear prediction model to calculate a limit current envelope of a whole test period; locking an optimal static range with the highest resolution and meeting the upper limit of the range in a source measurement unit according to the limit current envelope; and continuously collecting time-domain fluctuation data under the fixed range and mapping the time-domain fluctuation data into a noise spectrum, wherein the present application effectively solves the contradiction between range overflow and insufficient quantization accuracy caused by thermal drift in long-period test through a prior range arbitration mechanism based on the drift envelope, eliminates transient interference introduced by dynamic range switching, and realizes nondestructive characterization of early defects of the device oxide layer.

The application discloses a testing method for a three-terminal tandem solar cell. The method comprises the following steps: setting a source measurement unit (SMU) between a common electrode and a bottom electrode of a three-terminal tandem solar cell to be tested, setting another SMU between a top electrode and the common electrode, and simultaneously applying a voltage to detect a steady-state current passing through the two SMUs; obtaining an electrical performance parameter and a maximum power point (MPP); further narrowing a voltage setting range and repeating the test to obtain an accurate value of the MPP. The application can be simultaneously applied to a series structure and a reverse series structure.

The application provides a high-density test chip super-speed measurement method, preset signals required for testing are written into a function generator and a source measurement unit; the function generator and the source measurement unit are controlled to generate synchronous trigger CLK signals and DF signals respectively, an address register connected with the function generator switches addresses according to waveform transformation of the CLK signals, the source measurement unit continuously samples different addresses according to the DF signal frequency, a plurality of sampling data corresponding to each address is determined, and effective measurement values corresponding to each signal address of the function generator are determined from the plurality of sampling data and are aligned. The super-speed test is realized by means of hardware synchronous triggering and cooperation of the SMU continuous sampling mode, each address is measured multiple times, data analysis is cooperated to realize alignment of the test address and the effective data, the test data misplacement problem can be avoided, and the test data stability is effectively improved. A test system with corresponding advantages is also provided.