Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory control device and memory control method

A technology of a control device and a control method, which can be applied in the fields of protecting storage content to prevent loss, error detection of instruments and redundant codes, etc., and can solve the problems of data retention time leakage and the like

Inactive Publication Date: 2015-07-29
MITSUBISHI ELECTRIC CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, this flash ROM is configured to record data values ​​by confining electric charge into the device, so a phenomenon called "leakage" may occur due to variations in the data retention time of each memory cell, the influence of noise, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory control device and memory control method
  • Memory control device and memory control method
  • Memory control device and memory control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0016] figure 1 It is a configuration diagram of the memory control device according to the embodiment of the present invention, and is a diagram for explaining the operation when the CPU 1 starts up. also, figure 2 It is a configuration diagram of the memory control device according to the embodiment of the present invention, and is a diagram for explaining the operation when the flash ROM 4 is written or erased.

[0017] In the following description, the configuration of the memory control device will be described first, and then the operation when the CPU 1 starts up and the operation when writing data in the flash ROM 4 is performed will be described.

[0018] exist figure 1 and figure 2 In the memory control device of this embodiment, its main structure includes CPU1, flash ROM4 (hereinafter referred to simply as "ROM4"), and an address line switcher 5 between the address bus 2 of CPU1 and ROM4 (first switching device), decoder 7, and data line switcher 6 (second sw...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A memory control device includes a CPU 1, a flash ROM 4 that records therein first information having undergone an error-correction coding process and second information not having undergone an error-correction coding process, an address line switch 5 that switches between a first path that connects an address bus 2 to the ROM 4 so that the CPU 1 can read the first information recorded in the ROM 4 and a second path that connects the address bus 2 to the ROM 4 so that the second information recorded in the ROM 4 can be erased, written, and read, a decoder 7 that performs error correction on the first information recorded in the ROM 4 and performs decoding, and a second switch 6 that switches between a third path that connects the decoder 7 to the data bus 3 so that information decoded by the decoder 7 is transmitted to the data bus 3 and a fourth path that connects the ROM 4 to the data bus 3 so that the second information recorded in the ROM 4 can be erased, written, and read.

Description

technical field [0001] The present invention relates to a memory control device and a memory control method using an electrically rewritable nonvolatile memory (“flash ROM” or “EEPROM: Electrically Erasable Programmable ROM”). Background technique [0002] In recent years, a flash ROM is generally mounted as a recording medium for an operating system (OS), application software, and the like in a memory control device that performs various controls by a CPU (Central Processing Unit). This flash ROM has the following features. (1) The data is retained even when the power is turned off. (2) Before writing data, it is necessary to erase the writing area. (3) Data erasure needs to be performed in predetermined block units for each device, and is performed by supplying signals in steps specified by the data pins of the device. (4) Writing of data is carried out by supplying signals according to the procedure specified by the data pin of the device. [0003] However, this flash...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/16
CPCG06F11/1008G06F11/10G06F11/1417
Inventor 重枝哲也
Owner MITSUBISHI ELECTRIC CORP