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Semiconductor component and method for producing a semiconductor component

A technology for semiconductors and devices, which is applied in the field of semiconductor devices and used in the manufacture of semiconductor devices, and can solve problems such as the decline in crystal quality

Active Publication Date: 2013-04-24
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when growing especially nitride semiconductor materials on silicon substrates, strains occur due to the different lattice parameters of the materials involved, which lead to a decrease in the crystalline quality of the grown layer

Method used

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  • Semiconductor component and method for producing a semiconductor component
  • Semiconductor component and method for producing a semiconductor component
  • Semiconductor component and method for producing a semiconductor component

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Embodiment Construction

[0034] In the exemplary embodiments and figures, identical or identically acting components can always be provided with the same reference symbols. The shown elements and their mutual size relations cannot in principle be regarded as to scale, on the contrary, for better illustration and / or for better understanding, the individual elements, such as layers, components, Features and regions may be shown thick or exaggerated in size.

[0035] In the following exemplary embodiments, a semiconductor component embodied as a light-emitting diode chip is shown purely by way of example. This means in particular that the illustrated semiconductor components each have an active region which is suitable for emitting light during operation. As an alternative or in addition to this, the active region of the illustrated semiconductor component can also have a radiation-receiving layer. Furthermore, alternatively or additionally, the semiconductor component according to this exemplary embod...

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Abstract

The invention relates to a semiconductor component having a semiconductor layer sequence (2) made of a nitridic composite semiconductor material on a substrate, wherein the substrate (1) comprises a silicon surface facing the semiconductor layer sequence (2), and the semiconductor layer sequence (2) comprises an active region (21) and at least one intermediate layer (3) made of an oxygen-doped AlN composite semiconductor material between the substrate (1) and the active region (21). The invention further relates to a method for producing a semiconductor component.

Description

[0001] This patent application claims priority from German patent application 102010035489.9, the disclosure of which is hereby incorporated by reference. technical field [0002] A semiconductor device and a method for manufacturing the semiconductor device are presented. Background technique [0003] Compound semiconductor materials, in particular so-called III-V compound semiconductors, are of interest, for example, for the production of light-emitting diodes (LEDs). GaN-based LEDs in particular enable the generation of light up to the ultraviolet spectral range. To produce such an LED, a suitable layer sequence of, for example, a GaN-containing compound semiconductor material is grown on a substrate. For epitaxial growth, sapphire or silicon carbide is usually used as substrate material, which has a lattice structure matched to that of the compound semiconductor material. However, a disadvantage of the substrate material is, for example, its high price. [0004] A che...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/12
CPCH01L33/12H01L33/007H01L29/2003H01L33/32
Inventor 彼得·施陶斯菲利普·德雷克塞尔约阿希姆·赫特功
Owner OSRAM OPTO SEMICON GMBH & CO OHG