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Cell State Determination in Phase Change Memory

A phase-change memory and state technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of effective scaling, redundancy is not conducive to memory capacity, and code effectiveness is reduced.

Inactive Publication Date: 2016-06-22
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although drift coding can be a potentially powerful technique, its effectiveness generally scales with the redundancy of the code used
Higher redundancy is detrimental to the memory capacity available to store actual user data
Usually only minimal redundancy is tolerated, and this can reduce the code's effectiveness in dealing with drift

Method used

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  • Cell State Determination in Phase Change Memory
  • Cell State Determination in Phase Change Memory
  • Cell State Determination in Phase Change Memory

Examples

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Embodiment Construction

[0037] figure 1 is a simplified schematic diagram of a phase change memory device embodying the present invention. The device 1 includes a phase change memory 2 for storing data in one or more integrated arrays of multi-level PCM cells. Although shown as a single block in the figures, in general the memory 2 may comprise any desired configuration of PCM memory cells, ranging for example from a single chip or die to packages each containing multiple memory chips Multiple storage groups. Reading and writing of data to the memory 2 is performed by the read / write device 3 . The device 3 comprises a data write and read measurement circuit 4 for writing data to the PCM cells and for making cell measurements to allow the cell state to be determined and thus the stored data to be read back. Circuitry 4 can address individual PCM cells for both writing and reading purposes by applying appropriate voltages to the word lines and bit line arrays in memory population 2 . This process i...

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Abstract

Provide methods and devices for determining the state of phase -changing memory units.Multiple measurements for units, measured the voltage characteristics dependent on the sub -threshold current dependent on the unit.The processing measurement measures to obtain a slope dependent on the current comparison voltage characteristics.The state of the unit is then determined according to this measuring unit that is different from the absolute unit resistance and basically not affected by drift.

Description

technical field [0001] The present invention relates generally to phase change memory, and more particularly to a method and apparatus for determining the state of a phase change memory cell. Background technique [0002] Phase-change memory (PCM) is a new type of non-volatile solid-state memory technology that utilizes the reversible switching of certain chalcogenide materials between at least two states with different electrical conductivities. PCM is fast, has good retention and durability properties and has been shown to be upgraded to future lithography nodes. For these reasons it is considered to have the potential to replace or complement flash in today's mainstream memory and storage applications. [0003] In commercially available PCM devices, the basic memory unit ("cell") can be set to one of two states, crystalline and amorphous, by applying heat. In the amorphous state, which represents a binary 0, the resistance of the cell is high. The chalcogenide material...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C13/00
CPCG11C11/5678G11C13/0004G11C13/004G11C7/1006H10N70/231
Inventor E·S·埃里弗塞里乌A·潘塔齐N·帕潘德雷乌C·伯津迪斯A·塞巴斯蒂安
Owner IBM CORP