Method for manufacturing back-illuminated image sensor deep groove by using negative photoresist
A negative photoresist and image sensor technology, applied in radiation control devices and other directions, can solve the problem of difficult etching of high aspect ratio trenches, and achieve the effect of improving quality
Active Publication Date: 2013-05-15
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
[0003] The technical problem to be solved by the present invention is to provide a method of using negative photoresist to manufacture deep trenches, which solves the problem of difficult etching of high aspect ratio trenches in the prior art
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[0028] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0029] figure 1 It is a schematic flow chart of the method for making a back-illuminated image sensor deep groove with a negative photoresist in the present invention, as figure 1 As shown, a method for making deep grooves of back-illuminated image sensors with negative photoresist comprises the following steps,
[0030] Step 101: After the device wafer is bonded to the logic wafer, the oxide on the surface of the wafer is etched to expose the tetraethoxy silicon layer;
[0031] Step 102: depositing an isolation oxide layer on the surface of the etched wafer;
[0032] Step 103: Coating a layer of negative photoresist on the isolation oxide layer, making the first negative photoresist pattern on the negative photor...
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The invention relates to a method for manufacturing a back-illuminated image sensor deep groove by using negative photoresist. The method comprises the following steps: etching surface oxides of a wafer until a tetraethoxy-silicane layer is exposed after a device wafer and a logic wafer are bonded; depositing an isolation oxide layer on the surface of the wafer after the wafer is etched; coating a layer of negative photoresist on the isolation oxide layer, manufacturing a negative photoresist pattern on the negative photoresist by photoetching, and confirming the area of etching the groove; etching the groove by using the negative photoresist pattern as a masking layer; after etching the groove, coating a layer of negative photoresist on a silicon wafer again, manufacturing a negative photoresist pattern on the negative photoresist pattern by photoetching, using the negative photoresist pattern as a masking layer for etching a through hole, and stopping the through hole etching on metal of the top layer of the wafer. High aspect ratio grooves are manufactured by using the negative photoresist, and the quality of the image sensor is improved.
Description
technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a method for making deep grooves of back-illuminated image sensors by using negative photoresist. Background technique [0002] The large-scale integrated circuit manufacturing process is a planar manufacturing process that forms a large number of various types of semiconductor devices on the same substrate and interconnects them to have complete functions. In the integrated circuit manufacturing process, it is often necessary to form a large number of trenches on the substrate, and the formed trenches can be filled with metal to form metal wiring. All subsequent devices and wiring structures are built on trenches, so trench etching has a special status in the entire process flow. For super junction devices, pressure sensitive sensor devices, high power devices, image sensors and other manufacturing processes, deep trench technology is widely used. Deep trench...
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IPC IPC(8): H01L27/146
Inventor 李平
Owner WUHAN XINXIN SEMICON MFG CO LTD