Light emitting diode with current diffusion structure and production method thereof

Abstract

Provided are a light emitting diode with a current diffusion structure and a production method thereof. The light emitting diode with the current diffusion structure and the production method thereof comprise an N-shaped electrode, an N-shaped semiconductor layer, a current barrier layer, a luminous layer, a P-shaped semiconductor layer and a P-shaped electrode, wherein the N-shaped semiconductor layer, the luminous layer and the P-shaped semiconductor layer form a sandwich structure, the N-shaped electrode is arranged on the N-shaped semiconductor layer and the P-shaped electrode is arranged on the P-shaped semiconductor layer. In order to distribute and arrange the current barrier layer inside the N-shaped semiconductor layer in a buried mode according to the pattern of the N-shaped electrode, accordingly by arranging the current barrier layer inside the N-shaped semiconductor layer in a buried mode, and apart from enabling a current produced by the N-shaped electrode to steer by the current barrier layer to pass through the luminous layer evenlly, the light emitting diode with the current diffusion structure and the production method thereof can also prevent an interface effect from causing increase of impedance, so that luminous efficiency can be improved. Moreover, the light emitting diode with the current diffusion structure and the production method thereof can enable a main luminous zone of the luminous layer to be far away from the N-shaped electrode, so that light-shielding amount of the N-shaped electrode can be reduced and luminance can be improved.

Description

technical field [0001] The invention relates to light-emitting diodes, in particular to light-emitting diodes that can increase luminous efficiency. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is mainly formed by multiple epitaxy of a light emitting semiconductor material, taking a blue light emitting diode as an example. It is mainly composed of gallium nitride-based (GaN-based) epitaxial thin films stacked to form a sandwich structure with an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. [0003] see figure 1 As shown, it is an existing horizontal light-emitting diode 1, which inserts a current blocking layer 3 in a P-type semiconductor 2, so as to disperse the current through the blocking of the current blocking layer 3, so that the light-emitting layer 4 can emit light uniformly and increase the light emission. However, the light-emitting area of ​​this horizontal light-emitting diode structure...

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Problems solved by technology

[0003] see figure 1 As shown, it is an existing horizontal light-emitting diode 1, which inserts a current blocking layer 3 in a P-type semiconductor 2, so as to disperse the current through the blocking of the current blocking layer 3, so that the light-emitting layer 4 can emit light uniformly and increase the light emission. However, the light-emitting area of ​​this horizontal light-emitting diode structure is inherently limited. In order to reduce the light shielding amount of the electrode, the P-type electrode 5 mostly adopts a transparent conductive layer (such as indium tin oxide) to increase light transmission. However, the conductivity of indium tin oxide is not good, it is easy to cause the interface effect, resulting in an increase in impedance, and its luminous efficiency cannot be effectively improved

[0004] see figure 2 As shown, it is another existing vertical light-emitting diode 6, which does not need to use a transparent conductive layer, so there is no problem of poor conductivity of indium tin oxide, but it allows the current blocking layer 7 to be arranged between the P-type semiconductor 8 and the Between the P-type electrodes 9, it causes the contact area between the P-type semiconductor 8 and the P-type electrode 9 to decrease, which still leads to an increase in impedance, and cannot effectively improve the luminous efficiency.

[0005] Obviously, the existing technology cannot control the increase in impedance while dispersing the current, so it cannot really improve the luminous efficiency and meet the needs of use

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