Heat sink material and preparation method thereof

A heat sink material and a part of the technology, applied in the field of heat sink materials and their preparation, can solve the problems of difficult to achieve strength requirements and insufficient mechanical strength, and achieve the effects of low density, high insulation and cost reduction

Active Publication Date: 2015-03-04
XIAMEN UNIV OF TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although graphite material has excellent thermal conductivity, it is a good conductor of electricity, and its mechanical strength is insufficient, and some requirements for higher strength are difficult to achieve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heat sink material and preparation method thereof
  • Heat sink material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Batching and pulping: SiC powder, silicon powder, graphite powder and methyl cellulose are powdered according to the mass ratio of 37:44:14:5, wherein the particle size is 3 μm silicon carbide powder and 10 μm silicon carbide powder mass The ratio is 2:1. Take out the methyl cellulose and add a certain amount of water to saturation, heat in a water bath at 60°C, and stir evenly to obtain a transparent solution. Then, silicon carbide powder, silicon powder and graphite powder were mixed and added into the solution, put into a stirrer and stirred for 1 hour, and then the slurry was taken out.

[0032] 2. Graphite substrate decontamination and activation treatment: Use acetone to degrease the graphite substrate at room temperature and wash it with water. Then use HNO 3 (20%) Activate the degreased graphite substrate for 10 minutes, and then wash it with water to increase the contact area between the coating and the substrate material. Finally, the graphite substrate ...

Embodiment 2

[0039] 1. Batching and pulping: SiC powder, silicon powder, carbon black and polyvinyl alcohol are powdered according to the mass ratio of 50:33:13:4, and the particle size of the SiC powder is 0.5 μm. Take out the polyvinyl alcohol and add a certain amount of water to saturation, heat in a water bath at 80°C, and stir evenly to obtain a transparent solution. Then, silicon carbide powder, silicon powder, and carbon black were mixed and added into the solution, put into a stirrer and stirred for 0.5 hours, and then the slurry was taken out.

[0040]2. Graphite substrate decontamination and activation treatment: Use alcohol to degrease the graphite substrate at room temperature and wash it with water. Then use sulfuric acid (30%) to activate the degreased graphite substrate for 10 minutes, and wash it with water to increase the contact area between the coating and the substrate material. Finally, the graphite substrate was ultrasonically cleaned for 10 min.

[0041] 3. Coating...

Embodiment 3

[0047] 1. Batching and pulping: SiC powder, Si powder, carbon black, methyl cellulose and polyvinyl alcohol are powdered according to the mass ratio of 60:24:12:2:2, and the particle size of SiC powder is 5 μm . Take out the methyl cellulose and polyvinyl alcohol, add a certain amount of water to saturation, heat in a water bath at 80°C, and stir evenly to obtain a transparent solution. Then, silicon carbide powder, silicon powder, and carbon black were mixed and added into the solution, put into a stirrer and stirred for 0.5 hours, and then the slurry was taken out.

[0048] 2. Graphite substrate decontamination and activation treatment: Use alcohol to degrease the graphite substrate at room temperature and wash it with water. Then use nitric acid (30%) to activate the degreased graphite substrate for 10 minutes, and wash it with water to increase the contact area between the coating and the substrate material. Finally, the graphite substrate was ultrasonically cleaned for ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
thermal conductivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a heat sink material and a preparation method thereof. The heat sink material comprises a graphite substrate. A silicon carbide layer is metallurgically bonded on the top of the graphite substrate. The graphite substrate has a thermal conductivity greater than 150w / (m.K), and is a graphite sheet, or a graphite composite sheet or graphite composite board with graphite as a raw material. According to the invention, graphite is bonded with silicon carbide, such that a graphite-silicon carbide heat sink material with a metallurgically bonded interface is formed. The material has excellent insulation, excellent thermal conductivity, and relatively low expansion coefficient. With a graphite-silicon carbide coating method, the coating forms metallurgical bonding with the graphite substrate, such that material compactness and bonding degree are improved, and material thermal conductivity-heat dissipation performance is further improved.

Description

technical field [0001] The invention relates to a heat sink material used for heat conduction and heat dissipation of LEDs, in particular to a heat sink material and a preparation method thereof. Background technique [0002] With the continuous improvement of semiconductor technology and manufacturing process, the luminous flux and luminous efficiency of LED have been continuously improved, and power LEDs have been widely used in daily life and industrial production. However, for high-power LEDs, the power density of the chip is high, and the large heat generation undoubtedly puts forward higher requirements for its heat dissipation materials. [0003] The heat dissipation of traditional LED chips, its structure is as follows figure 1 As shown, a substrate 3' (that is, a heat sink material) is provided under the LED chip 1', and the bottom of the substrate 3' is connected to the heat sink 4', and the heat of the LED chip 1' is conducted to the heat sink through the substra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B32B18/00C04B35/52C04B35/565C04B35/622
Inventor 胡业奇许龙山张福斌储长锋郭石磊
Owner XIAMEN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap