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Junction-case thermal resistance test method

A test method and technology of thermal resistance, applied in the direction of material thermal development, material thermal conductivity, etc., can solve the problems of small junction-to-shell thermal resistance, small heat dissipation area, erroneous measurement value, etc., to avoid early separation, accurate Effect of Thermal Resistance Test Results

Active Publication Date: 2015-08-26
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Description
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Problems solved by technology

Especially for power semiconductor modules, such as insulated gate bipolar transistors (IGBT), these products use silicon, ceramics, copper and other packaging materials with obvious temperature nonlinearity, and have a large heat dissipation area and small junction-to-case thermal resistance, and the instantaneous The early separation of the state thermal impedance curve will cause the measured junction-to-case thermal resistance to be significantly smaller or even get wrong measured values.

Method used

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Embodiment Construction

[0022] The present invention will be further described below in conjunction with the drawings and specific embodiments.

[0023] The thermal resistance test method of the crust of the present invention includes the following steps:

[0024] (1) Measure the transient cooling curve of the chip of the semiconductor device under test under dry contact conditions;

[0025] (2) Measure the transient temperature drop curve of the semiconductor device under test under wet contact conditions;

[0026] (3) Calculate the difference △T between the transient cooling curve of the semiconductor device chip under test under dry contact conditions and the temperature change range of the transient cooling curve of the semiconductor device under wet contact conditions;

[0027] (4) Increase the temperature of the constant temperature heat dissipation cold plate in the test equipment by △T, and measure the transient cooling curve under wet contact conditions again;

[0028] (5) Use the dry contact cooling c...

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Abstract

A measurement method for a junction-to-case thermal resistance is provided. First, a first transient cooling curve of the chip for the semiconductor device under test (DUT) without grease is measured. Then a second transient cooling curve of the chip for the DUT with grease is measured. A difference ΔT of temperature variations of the two transient cooling curves with and without grease is calculated. The temperature of a constant temperature cold plate for fixing the semiconductor DUT is increased by ΔT, and a third transient cooling curve of the chip for the DUT with grease is measured again. The first transient cooling curve and the third transient cooling curve are used to calculate the junction-to-case thermal resistance.

Description

Technical field [0001] The invention relates to a junction-case thermal resistance test method, in particular to a junction-case thermal resistance test method of a semiconductor device. Background technique [0002] The junction-to-case thermal resistance is an important indicator of the performance parameters of a semiconductor device, which characterizes the heat dissipation capability of the device. In the design and use of semiconductor devices, heat dissipation characteristics are an important factor that must be considered. Accurate measurement of junction-to-case thermal resistance has important reference significance for improving packaging and heat dissipation design and evaluating the operating limits of devices. [0003] The traditional junction-case thermal resistance test method uses a thermocouple to measure the case temperature of the device. Due to the temperature difference between the end of the thermocouple and the contact surface of the device case, the temper...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N25/20
CPCG01N25/18
Inventor 仇志杰张瑾温旭辉
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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