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Photosensitive novolac resin, positive photosensitive resin composition including same

A technology of novolak resin and resin composition, which is applied in the direction of photosensitive materials, optics, and optomechanical equipment for optomechanical equipment, and can solve the problems of unsatisfactory submicron lithography

Active Publication Date: 2013-07-03
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, said photoresists are still not satisfactory for the extreme micron processing for fabricating very large integrated direct circuits, so-called submicron lithography.

Method used

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  • Photosensitive novolac resin, positive photosensitive resin composition including same
  • Photosensitive novolac resin, positive photosensitive resin composition including same
  • Photosensitive novolac resin, positive photosensitive resin composition including same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0274] Synthesis Example 1: mp91-500

[0275]The mixed solution of 100g m-cresol and p-cresol mixed with a weight ratio of 90:10 was put into a 500mL three-necked flask, and 23.4g of formaldehyde was added thereto (relative to the mixing of 1.0 moles of m-cresol and p-cresol solution is 0.35 molar). Then, 0.3 g of an oxalic acid catalyst (0.3 parts by weight based on 100 parts by weight of a mixed solution of m-cresol and p-cresol) was added to the mixture, and the resulting mixture was stirred for 1 hour. The stirred product was stirred at a temperature of 100° C. to 105° C. for 4 hours to perform an additional condensation reaction, thereby obtaining a cresol novolak resin. When the reaction was complete, the temperature of the reactant (result) was raised to 200°C, and water generated during condensation and unreacted monomers were removed from the reactant (result) at 1 atm. In addition, the obtained reactant (result) was evacuated at 200° C. to completely remove unreact...

Synthetic example 2

[0276] Synthesis example 2: mp91-2000

[0277] According to the same method as Synthetic Example 1, 47g alkali-soluble novolak resin with 2000 weight-average molecular weight was prepared, the difference is that the formaldehyde (relative to the mixed solution of 1.0 mole m-cresol and p-cresol is 0.7 Moore).

Synthetic example 3

[0278] Synthesis example 3: mp82-500

[0279] Prepared 50g alkali-soluble novolac resin with 500 weight average molecular weight according to the same method as synthetic example 1, difference is, mix m-cresol and p-cresol with the weight ratio of 90:10 and use the formaldehyde of 24.8g ( 0.37 mol based on 1.0 mol of the mixed solution of m-cresol and p-cresol).

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Abstract

Disclosed is a photosensitive novolac resin including a structural unit represented by the following Chemical Formula 1 and structural unit represented by the following Chemical Formula 2, wherein R<11>, R<12>, R<13>, and R<14> in Chemical Formulae 1 and 2 are the same as defined in the detailed description, a positive photosensitive resin composition including the same, a photosensitive resin film fabricated using the same, and a semiconductor device including the photosensitive resin composition.

Description

[0001] related application [0002] This application claims priority and benefit from Korean Patent Application No. 10-2011-0146190 filed in the Korean Intellectual Property Office on December 29, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a photosensitive novolac resin (photosensitive novolac resin, photosensitive novolac resin), a positive photosensitive resin composition containing the same (positive photosensitive resin composition, positive photosensitive resin composition), and a photosensitive resin film ( photosensitive resin film), and a semiconductor device (semiconductor device) comprising the photosensitive resin composition. Background technique [0004] Conventional surface protective layers and interlayer insulating layers used in semiconductor devices contain polyimide resins that are excellent in heat resistance, electrical characteristics, mechanical characteristics, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/039C08G8/30G03F7/09H01L23/29
CPCC08G8/28C08G73/22C08L61/14C08L79/04H01L23/293G03F7/023H01L2924/0002G03F7/0233H01L2924/00C08G61/00G03F7/004G03F7/0045G03F7/039G03F7/0392
Inventor 李种和赵显龙郑闵鞠郑知英车明焕
Owner CHEIL IND INC
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