A kind of preparation method of trench semiconductor power discrete device
A technology of discrete devices and semiconductors, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as complicated steps, poor terminal structure of semiconductor devices, and difficult generation, so as to reduce manufacturing costs and increase performance and price than the effect
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Embodiment 1
[0059] Such as figure 1 As shown, the epitaxial layer is placed above the substrate. First, an oxide layer (with a thickness of 0.3 μm to 1.5 μm oxide hard mask) is formed on the epitaxial layer by deposition or thermal growth, and then another layer is deposited on the oxide layer. The photolithographic coating is then patterned through a trench mask to expose some portions of the oxide layer.
[0060] Such as figure 2 As shown, after dry etching the oxide layer exposed by patterning the trench mask, the epitaxial layer is exposed, and then the photolithographic coating is removed.
[0061] Such as image 3 As shown, implant P-type dopants on the surface of the silicon wafer (the dose is 8e12 / cm 3 to 2e14 / cm 3 ), the part covered by the original oxide layer is not implanted, and the part not covered by the original oxide layer, the P-type dopant will be implanted on the surface of the epitaxial layer to form a P-type region, and the P-type dopant can be B11 (boron boron)...
Embodiment 2
[0075] The technical scheme of the present embodiment is roughly the same as that of embodiment 1, and its difference only lies in:
[0076] In the above example 1 Figure 5 Before etching the trench, first deposit a layer of oxide layer and seal the opening width of the trench mask in the oxide layer ranging from 0.2 μm to 0.6 μm. The width of the sealed opening can be 0.2 μm or 0.3 μm or 0.4 μm or 0.5 μm or 0.6 μm varies, depending on the preparation method. The advantage of this step is that some openings of the trench mask are implanted with P-type dopants but not opened out of the trench. The terminal structure of the device is better, so the breakdown voltage of the device is higher and more stable, and then the oxide layer is dry-etched to remove the oxide layer on the opening and expose the epitaxial layer on the opening; after that, the groove is etched, At this time, only those openings that are not sealed by the precipitated oxide layer are trenched, and the trench...
Embodiment 3
[0078] The technical scheme of the present embodiment is roughly the same as that of embodiment 1, and its difference only lies in:
[0079] In the above example 1 Figure 13 Before etching the contact hole trench, first deposit a layer of (LPCVD) oxide layer, and then perform dry etching on the oxide layer to remove the oxide layer in the opening of the contact hole trench, exposing the epitaxial layer in the opening; etched contact hole trenches. Other steps are basically the same as in embodiment 1 or embodiment 2, and the cross section of the device is as follows Figure 17 shown.
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