Electrostatic discharge protection circuit
An electrostatic discharge protection and electrostatic discharge technology, applied in emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, circuits, etc., can solve long-term reliability cannot be guaranteed, manufacturing procedures are complicated, and cost increases And other issues
Active Publication Date: 2013-07-24
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
In this case, different types of transistors are implemented in the IC, thus complicating the manufacturing process and increasing the cost
[0004] In addition, since electrostatic current caused by electrostatic discharge (ESD) in semiconductor ICs tends to concentrate at the weakest part of the transistor, melting may occur at the junction, contact portion, or gate oxide, resulting in failure
As a result, long-term reliability cannot be guaranteed due to the thin gate oxide used for dielectric gate oxide transistors
Method used
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[0027] Hereinafter, the present disclosure will now be described more fully with reference to the accompanying drawings, in which various exemplary embodiments are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
[0028] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items, and the term "and / o...
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An electrostatic discharge (ESD) protection circuit includes a first power line; a second power line; a ground line; two stack transistors connected in series between the first power line and the ground line; a first resistor connected between the first power line and a first node; a first transistor and a capacitor connected in series between the first node and the ground line; a second transistor connected between the second power line and a second node; a third transistor connected between the first power line and a third node; an inverter, connected between the third node and the ground line, and having an input connected to the second node; a fourth transistor, connected to the first power line, and having a gate connected to the second node; and a fifth transistor, connected between the second power line and the third node, and having a gate connected to a terminal of the fourth transistor.
Description
[0001] This application claims priority from Korean Patent Application No. 10-2012-0005909 filed on Jan. 18, 2012, the disclosure of which is hereby incorporated by reference in its entirety. Background technique [0002] The present disclosure relates to an electrostatic discharge protection circuit for preventing internal elements from being damaged due to generation of static electricity. [0003] To implement digital interfaces operating at high speeds, medium gate oxide transistors (medium gate oxide transistors) that operate at voltages lower than the high supply voltage supplied to integrated circuits (ICs) can be used, while thick gate oxide transistors are also used to The interface is provided in the IC with said supply voltage. In this case, different types of transistors are implemented in the IC, thus complicating the manufacturing process and increasing the manufacturing cost. [0004] In addition, since electrostatic current caused by electrostatic discharge (E...
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IPC IPC(8): H02H9/02H02H9/04H01L27/02
CPCH02H9/044H02H9/046H01L27/04
Inventor 全灿熙金杜炯金汉求徐宇镇李起泰任弘郁
Owner SAMSUNG ELECTRONICS CO LTD