A kind of manufacturing method of high resistance solar cell
A technology for solar cells and manufacturing methods, which is applied to the manufacture of circuits, electrical components, and final products, and can solve the problems of increasing the resistance of the moving current to the electrodes of the grid wires, the inability of the emitter to take into account at the same time, and the increase in the resistance of the emitter, so as to achieve improved Short-wave response, stable response, and improved open-circuit voltage
Active Publication Date: 2015-12-09
山东力诺太阳能电力股份有限公司
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Problems solved by technology
[0004] At present, the emitter made by the conventional diffusion method cannot meet the above two requirements at the same time
Generally, if the doping concentration is not too high, the Auger recombination will be greatly increased, and the minority carriers formed in the emission region are easy to recombine, resulting in a decrease in short-wave response; if the surface concentration is reduced, the junction depth will also become shallower, thin layer The resistance is high, and the resistance of the emitter must increase, thereby increasing the resistance of the current moving to the grid electrode in the emission area, increasing the probability of PN junction burn-through in the subsequent electrode sintering process, and reducing the battery yield.
Method used
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Embodiment 1
power open circuit voltage short circuit current fill factor Conversion efficiency leakage current The technology of the present invention 4.454 0.6355 8.858 79.12 18.30% 0.173 current technology 4.440 0.6337 8.863 79.06 18.25% 0.318
[0024] Example 2:
[0025] Select polysilicon wafer; silicon wafer 4 undergoes conventional cleaning process and texturing, put silicon wafer 4 into a diffusion furnace for P atom 1 deposition, make a junction depth of 0.3 microns, square resistance 70ohm / sq after peripheral etching, phosphosilicate glass After removal, put in phosphoric acid, HF and HNO 3 In the mixed solution, the solution temperature is 5°C, the mass fraction of phosphoric acid is 0.3%, the mass fraction of HF is 7.0%, HNO 3 Perform 100s of etching in a solution with a mass fraction of 21.6% to remove the heavily doped emitter 2. After fabrication, the square resistance of the emitter is 80ohm / sq, and the surface is the lightly doped emi...
Embodiment 2
[0027]
[0028] It can be seen from the examples that the solar cell produced by the present invention can reduce its dark current, increase the open circuit voltage of the cell, and can effectively improve the conversion efficiency of the solar cell.
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The invention relates to a method for manufacturing a high-sheet-resistance solar cell. The method for manufacturing the high-sheet-resistance solar cell particularly comprises the following steps that (1) emitters are manufactured on the surfaces of flocked silicon slices, (2) etching peripherally and removing phosphorosilicate glass are sequentially conducted on the silicon slices obtained from the step (1), (3) high-sheet-resistance emitter manufacture is conducted on the silicon slices obtained from the step (2), and (4) depositing silicon nitride films, screen printing a front electrode, a back electrode and back aluminum , sintering are again sequentially conducted on the silicon slices obtained from the step (3). According to the method for manufacturing the high-sheet-resistance solar cells, an emitter structure which can form low surface doping concentration is mainly provided, a dead-layer emitter area on the surface of the solar cell can be effectively removed, a diffused doping concentration structure can be controlled, uniformity of diffusion sheet resistance is improved, and the service life of minority carriers is prolonged. Besides, short-wave response of the solar cell is further improved, dark current is reduced, open-circuit voltage of the solar cell can be improved, and the method is suitable for industrialized production.
Description
technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a method for manufacturing a high square resistance solar cell. Background technique [0002] Among all kinds of solar cells, crystalline silicon cells have always occupied the most important position. In recent years, great achievements and progress have been made in improving efficiency and reducing cost of crystalline silicon solar cells, further enhancing its dominant position in the future photovoltaic industry. [0003] As the core component of the solar cell, the emitter's surface doping concentration will directly affect the conversion efficiency of the solar cell. Solar cells have two requirements for the emitter: 1. The doping concentration should not be too high, and 2. The surface concentration should not be too low. [0004] At present, the emitter made by the conventional diffusion method cannot meet the above two requirements at the same time. G...
Claims
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IPC IPC(8): H01L31/18H01L31/0224
CPCY02P70/521Y02P70/50
Inventor 张春艳姜言森贾河顺徐振华马继磊任现坤
Owner 山东力诺太阳能电力股份有限公司