High vertical and horizontal ratio MEMS device and its formation method

Abstract

The HF vapor phase etch method etches high aspect ratio openings to form MEMS devices and other tightly packed semiconductor devices with 0.2um air gaps between structures. The HF vapor etch method etches oxide plugs and gaps with void portions and oxide liner portions, and further etchs oxide layers buried beneath silicon and other structures and is ideally suited for releasing cantilevers and other MEMS devices. In one embodiment, HF vapor phase etching is performed at room temperature and atmospheric pressure. A processing sequence is provided to form a MEMS device including a cantilever and a fixed and shock-resistant lateral in-plane electrode. The invention also provides the high aspect ratio MEMS device and its forming method.

Description

technical field [0001] The present disclosure generally relates to semiconductor fabrication methods and structures, and more particularly to the formation of MEMS (microelectromechanical systems) devices with fixed lateral electrodes using HF vapor phase etching processes. Background technique [0002] MEMS (Micro-Electro-Mechanical Systems) technology has become very common in the semiconductor manufacturing industry. MEMS devices (very small mechanical devices powered by electricity) find use in many applications. MEMS devices typically utilize cantilever-type structures that are free to bend and whose movement is detected by electrodes. [0003] As with all semiconductor structures, there are drivers for the formation of smaller sized cantilevers and other MEMS structures. It is desirable to form cantilevers or other MEMS devices that are close to each other and to their corresponding electrodes. To realize MEMS devices, it is desirable to form openings with high aspe...

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Problems solved by technology

These holes can adversely affect the mechanical performance of the MEMS device

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