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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased on-resistance, inability to close the breakdown voltage tending to the maximum value, etc.

Inactive Publication Date: 2013-09-11
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the off-breakdown voltage is accompanied by the on-resistance, and the increase in the off-breakdown voltage will also cause an increase in the on-resistance. Therefore, when designing semiconductor components, the off-breakdown voltage cannot be maximized. value

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0032] The semiconductor structure provided by the present invention and its manufacturing method utilize a thick dielectric layer to cover the edge portion of the field oxide, so higher tip electric fields can be avoided from occurring at the edge portion of the field oxide to reduce the hot carrier effect (hot carrier effect). In addition, the gate conductive layer can provide proper insulation through two dielectric layers with different thicknesses, so as to avoid electrical breakdown between the gate conductive layer and the body region.

[0033] Various embodiments are presented below for detailed description, and the embodiments are only used as examples for illustration, and are not intended to limit the scope of protection of the present invention.

[0034] Please refer to figure 1 , which is a schematic diagram of a semiconductor structure according to an embodiment of the present invention. The semiconductor structure 100 is, for example, a double-diffused metal s...

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Abstract

The invention discloses a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure comprises a substrate of a first conductivity type, a well region of a second conductivity type formed in the substrate, a first doped region, a second doped region, a field oxide, a first dielectric layer and a second dielectric layer. The first doped region and the second doped region are formed in the well region. The field oxide is formed on a surface region of the well region and located between the first doped region and the second doped region. The first dielectric layer is formed on the surface region of the well region and covers an edge part of the field oxide. The first dielectric layer has a first thickness. The second dielectric layer is formed on the surface region of the well region and has a second thickness which is smaller than the first thickness.

Description

technical field [0001] The present invention relates to a semiconductor structure and its manufacturing method, and in particular to a metal oxide semiconductor structure and its manufacturing method. Background technique [0002] In high-voltage systems, it is important for metal-oxide-semiconductor devices to have a high turn-off breakdown voltage (Vbd) and low on-resistance (Ronsp) during operation, so that the semiconductor device can withstand higher voltages and allow more More current flows between the drain and source to increase the power of the device. However, the off-breakdown voltage is accompanied by the on-resistance, and the increase in the off-breakdown voltage will also cause an increase in the on-resistance. Therefore, when designing semiconductor components, the off-breakdown voltage cannot be maximized. value. Therefore, how to increase the turn-off breakdown voltage of the semiconductor device and reduce the on-resistance during operation is an urgent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/336
Inventor 金宥宪徐志嘉黄胤富
Owner MACRONIX INT CO LTD