Thin film bulk acoustic resonator structure and manufacturing method thereof
A thin-film bulk acoustic wave and manufacturing method technology, which is applied in the field of piezoelectric device manufacturing, can solve problems such as the difficulty of high-Q thin-film bulk acoustic wave resonators, and achieve the effects of avoiding Q-value deterioration, reducing production costs, and simplifying the process
Active Publication Date: 2016-02-10
CHINA ELECTRONICS TECH GRP NO 26 RES INST
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Problems solved by technology
[0014] In view of the fact that the manufacturing method of the thin film bulk acoustic resonator structure in the prior art has the technical problem that it is difficult to manufacture a high Q value thin film bulk acoustic resonator, it is necessary to provide a thin film bulk acoustic resonator that can be relatively easily manufactured with a high Q value Fabrication method of thin film bulk acoustic resonator structure
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[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0033] see figure 1 , figure 1 It is a structural schematic diagram of the film bulk acoustic resonator structure of the present invention. The film bulk acoustic resonator structure of the present invention includes a substrate 7, a supporting layer film 8, a cavity 9, a first mass-loaded layer 3, a bottom electrode 4, a piezoelectric layer 5, a top electrode 6, an electrode lead-out window 10, and a welding pad layer 11 and a second mass-loaded layer 12 . Since the first mass-loaded layer 3, the bottom electrode 4, the piezoelectric layer 5, the top electrode 6, the electrode lead-out window 1...
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The invention relates to a film bulk acoustic resonator structure and a manufacture method thereof. The manufacture method comprises the steps of forming a film bulk acoustic resonator on a carrying sheet; forming a cavity in a substrate; placing the film bulk acoustic resonator in the cavity; and forming an electrical connection layer of electrodes of the film bulk acoustic resonator. According to the film bulk acoustic resonator structure and the manufacture method thereof, sacrificial materials mentioned in the prior art and a sacrificial layer film release process do not need, so that the process is simplified, Q value deterioration caused by residual of sacrificial layer materials is prevented, and the film bulk acoustic resonator structure of a high Q value can be manufactured simply. Besides, the manufacture method of the film bulk acoustic resonator structure and the film bulk acoustic resonator structure are low in manufacture cost.
Description
technical field [0001] The invention relates to a manufacturing method of a piezoelectric device, in particular to a manufacturing method of a film bulk acoustic wave resonator structure. [0002] In addition, the present invention also relates to a piezoelectric device, in particular to a film bulk acoustic resonator structure. Background technique [0003] Device miniaturization is the general trend, and people expect to integrate more and more functions on smaller and smaller devices. The same is true for various filtering devices, so thin film bulk acoustic resonators came into being. [0004] Thin film bulk acoustic resonator has many advantages such as high operating frequency, small insertion loss, high steepness of out-of-band suppression, high withstand power, and small size. The urgent need for filters has become a hot spot in the market. [0005] The Q value is an important index to measure the filtering ability of a thin film bulk acoustic resonator. A high Q...
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IPC IPC(8): H03H9/17H03H3/02
Inventor 杜波马晋毅米佳江洪敏
Owner CHINA ELECTRONICS TECH GRP NO 26 RES INST