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Method for manufacturing gas sensor for detecting NH3 at room temperature

A technology of gas sensor and manufacturing method, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., and can solve the problems of uneven film formation of inorganic sensitive films, etc.

Inactive Publication Date: 2013-09-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a flexible substrate based on the detection of NH at room temperature 3 The production method of the gas sensor, in order to solve the problem of uneven film formation of inorganic sensitive films, to achieve the purpose of uniform film formation of sensitive materials and firm adhesion with flexible substrates

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  • Method for manufacturing gas sensor for detecting NH3 at room temperature
  • Method for manufacturing gas sensor for detecting NH3 at room temperature
  • Method for manufacturing gas sensor for detecting NH3 at room temperature

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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0032] like figure 1 as shown, figure 1 It is the production room temperature detection NH provided by the present invention 3 The method flowchart of the gas sensor, the method comprises the following steps:

[0033] Step 1: Fabricate metal electrodes on the surface of the flexible substrate; this step specifically includes: cleaning the flexible substrate, coating a photoresist on the surface of the flexible substrate, and performing photolithography on the photoresist to carve off the surface of the flexible substrate It is used to form the photoresist at the metal electrode, and form an electrode pattern on the surface of the flexible substrate; then use electron beam evaporation to sequentially deposit Cr film and ...

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Abstract

The invention discloses a method for manufacturing a gas sensor for detecting NH3 at room temperature. The method comprises the following steps of: manufacturing a metal electrode on the surface of a flexible substrate; manufacturing a sensitive membrane Alpha-Fe2O3-ZnO; and combining the sensitive membrane Alpha-Fe2O3-ZnO and the surface, which is provided with the metal electrode, of the flexible substrate to form the gas sensor for detecting the NH3 at the room temperature. According to the method, the sensitive membrane material is combined with the flexible substrate by an indirect method, so that high-temperature operation on the flexible substrate in a sensitive membrane preparation process is avoided; the sensitive membrane Alpha-Fe2O3-ZnO is coated on the SiO2 substrate; then the lower SiO2 is etched off by HF acid, and the sensitive membrane is separated from the substrate; and finally a layer of conductive silver paste is coated on the electrode surface of the flexible substrate, so that the sensitive membrane can be combined with the flexible substrate.

Description

technical field [0001] The invention belongs to the technical field of gas sensors based on flexible substrates, in particular to a gas sensor that can detect NH at room temperature and is obtained by high-temperature calcination. 3 α-Fe 2 o 3 -ZnO sensitive film, and use the chemical etching method to remove the sensitive film from SiO 2 separated from the substrate and transferred to the electrode surface of the flexible substrate, thus making a NH 3 gas sensor. Background technique [0002] With the development of science, the application of sensors is becoming more and more extensive, and it is imperative to manufacture a sensor that is light, cheap and can be manufactured in a large area. Due to its flexibility and other advantages, gas sensors based on flexible substrates have fundamentally improved many problems, so that they have broader application prospects. In addition, due to the limitation of its heat resistance, high-temperature calcination should be avoid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
Inventor 李冬梅詹爽梁圣法陈鑫谢常青刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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