Ultraviolet photodetector based on single-layer graphene/zinc oxide nanorod array Schottky junction and its preparation method
A zinc oxide nanorod, single-layer graphene technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem that ultraviolet photodetectors have not been studied, achieve mass production, avoid additional cost increases, The effect of overcoming the big disadvantage of reflection
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[0026] See figure 1 In this embodiment, the ultraviolet photodetector based on a single-layer graphene / zinc oxide nanorod array Schottky junction has the following structure: an N-type silicon base layer 1 is used as a substrate, and the N-type silicon base layer 1 is A zinc oxide nanorod array 2 is grown on the surface along the vertical direction. The upper surface of the zinc oxide nanorod array 2 is covered with an insulating layer 3. The area of the insulating layer 3 is 1 / 4 to 1 / of the area of the zinc oxide nanorod array 2. 3. The boundary of the insulating layer 3 does not exceed the boundary of the zinc oxide nanorod array 2; the insulating layer 3 is covered with a single-layer graphene 4, a part of the single-layer graphene 4 is in contact with the insulating layer 3, and the remaining part is covered with the zinc oxide nanorod array On the rod array 2, the boundary of the single-layer graphene 4 does not exceed the boundary of the zinc oxide nanorod array 2; a ...
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