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Ultraviolet photoelectric detector and preparation method thereof based on single-layer graphene/zinc oxide nano-rod array schottky junction

A technology of zinc oxide nanorods and single-layer graphene, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems that ultraviolet photodetectors have not been studied, and is suitable for large-scale production, avoiding the increase of additional costs, The effect of strong light detection ability

Inactive Publication Date: 2013-10-09
HEFEI UNIV OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

Despite some progress in these areas, graphene-modified ZnO nanostructured UV photodetectors have not been investigated

Method used

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  • Ultraviolet photoelectric detector and preparation method thereof based on single-layer graphene/zinc oxide nano-rod array schottky junction
  • Ultraviolet photoelectric detector and preparation method thereof based on single-layer graphene/zinc oxide nano-rod array schottky junction
  • Ultraviolet photoelectric detector and preparation method thereof based on single-layer graphene/zinc oxide nano-rod array schottky junction

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Embodiment 1

[0026] see figure 1 , the present embodiment is based on the ultraviolet photodetector of monolayer graphene / zinc oxide nanorod array Schottky junction and has following structure: with N-type silicon base layer 1 as substrate, on the N-type silicon base layer 1 A zinc oxide nanorod array 2 is grown on the surface along a vertical direction, and an insulating layer 3 is covered on the upper surface of the zinc oxide nanorod array 2, and the area of ​​the insulating layer 3 is 1 / 4 to 1 / 3 of the area of ​​the zinc oxide nanorod array 2 3. The boundary of the insulating layer 3 does not exceed the boundary of the zinc oxide nanorod array 2; the insulating layer 3 is covered with a single-layer graphene 4, a part of the single-layer graphene 4 is in contact with the insulating layer 3, and the remaining part is covered with zinc oxide nanorods. On the rod array 2, the boundary of the single-layer graphene 4 does not exceed the boundary of the zinc oxide nanorod array 2; a metal el...

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Abstract

The invention discloses an ultraviolet photoelectric detector and a preparation method of the ultraviolet photoelectric detector based on a single-layer graphene / zinc oxide nano-rod array schottky junction. The ultraviolet photoelectric detector is characterized in that an N-type silicon substrate layer serves as a substrate, a zinc oxide nano-rod array is generated on the upper surface of the substrate in the perpendicular direction, an insulation layer covers the upper surface of the zinc oxide nano-rod array, and the area of the insulation layer is 1 / 4-1 / 3 of that of the zinc oxide nano-rod array; single-layer graphene covers the insulation layer, part of the single-layer graphene is in contact with the insulation layer, and the remaining part covers the zinc oxide nano-rod array; a metal electrode layer is arranged on the single-layer graphene. According to the ultraviolet photoelectric detector and the preparation method of the ultraviolet photoelectric detector based on the single-layer graphene / zinc oxide nano-rod array schottky junction, technology is simple, the ultraviolet photoelectric detector is suitable for large-scale production, and the preparation method of the ultraviolet photoelectric detector is capable of manufacturing the ultraviolet photoelectric detector which is low in manufacturing cost, free in pollution and strong in optical detecting capacity and laying a foundation for the application of a graphene and zinc oxide nanostructure in the ultraviolet photoelectric detector.

Description

technical field [0001] The invention relates to an ultraviolet photodetector, in particular to an ultraviolet photodetector based on a nanomaterial Schottky junction. Background technique [0002] A photodetector is a device that converts light radiation into electricity, and it uses this feature to perform display and control functions. Ultraviolet photodetector is a device for detecting ultraviolet light, which plays a big role in people's daily life and even in military affairs. In life, it can be used in the fields of ultraviolet measurement in ultraviolet water purification, combustion engineering and flame detection, and ultraviolet detectors are also indispensable instruments in the fields of modern medicine and biology. In the military, ultraviolet detectors also play a very important role. Ultraviolet detection technology can be used in fields such as ultraviolet warning, ultraviolet communication, ultraviolet guidance, and ultraviolet interference. Therefore, man...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/02H01L31/0352H01L31/18
CPCY02P70/50
Inventor 罗林保聂彪谢超曾龙辉谢伟杰王先贺
Owner HEFEI UNIV OF TECH
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