Ultraviolet photoelectric detector and preparation method thereof based on single-layer graphene/zinc oxide nano-rod array schottky junction
A technology of zinc oxide nanorods and single-layer graphene, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems that ultraviolet photodetectors have not been studied, and is suitable for large-scale production, avoiding the increase of additional costs, The effect of strong light detection ability
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[0026] see figure 1 , the present embodiment is based on the ultraviolet photodetector of monolayer graphene / zinc oxide nanorod array Schottky junction and has following structure: with N-type silicon base layer 1 as substrate, on the N-type silicon base layer 1 A zinc oxide nanorod array 2 is grown on the surface along a vertical direction, and an insulating layer 3 is covered on the upper surface of the zinc oxide nanorod array 2, and the area of the insulating layer 3 is 1 / 4 to 1 / 3 of the area of the zinc oxide nanorod array 2 3. The boundary of the insulating layer 3 does not exceed the boundary of the zinc oxide nanorod array 2; the insulating layer 3 is covered with a single-layer graphene 4, a part of the single-layer graphene 4 is in contact with the insulating layer 3, and the remaining part is covered with zinc oxide nanorods. On the rod array 2, the boundary of the single-layer graphene 4 does not exceed the boundary of the zinc oxide nanorod array 2; a metal el...
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