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Ultraviolet photoelectric detector based on schottky junction and production method thereof

A technology of Schottky junction and electrical detector, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems that ultraviolet photodetectors have not been studied, and achieve the goal of being suitable for mass production, avoiding the increase of additional costs, and reducing The effect of preparation costs

Inactive Publication Date: 2017-02-22
罗雷
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Problems solved by technology

Despite some progress in these areas, graphene-modified ZnO nanostructured UV photodetectors have not been investigated

Method used

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  • Ultraviolet photoelectric detector based on schottky junction and production method thereof

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Embodiment 1

[0024] see figure 1 , the present embodiment is based on double-layer or triple-layer nitrogen-doped graphene / titanium dioxide nanotube array Schottky junction UV photodetector has the following structure: with the P-type silicon base layer 1 as the substrate, in the P-type silicon The upper surface of the base layer 1 is grown with a titanium dioxide nanotube array 2 along the vertical direction, and the upper surface of the titanium dioxide nanotube array 2 is covered with an insulating layer 3, and the area of ​​the insulating layer 3 is 1 / 4 to 1 / 4 of the area of ​​the titanium dioxide nanotube array 2. 1 / 3, the boundary of the insulating layer 3 does not exceed the boundary of the titanium dioxide nanotube array 2; the insulating layer 3 is covered with a double-layer or triple-layer nitrogen-doped graphene 4, a part of the double-layer or triple-layer nitrogen-doped graphene 4 In contact with the insulating layer 3, the remaining part is covered on the titanium dioxide na...

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Abstract

The invention discloses an ultraviolet photoelectric detector based on a two-layer or three-layer nitrogen-doped graphene / titanium dioxide nanotube array schottky junction and a preparation method thereof. The preparation method is characterized in that a P-type silicon substrate layer is used as a substrate, a titanium dioxide nanotube array grows on the upper surface of the substrate along a vertical direction, the upper surface of the titanium dioxide nanotube array is coated with an insulation layer, the area of the insulation layer is 1 / 4-1 / 3 of the area of the titanium dioxide nanotube array, the insulation layer is coated with two-layer or three-layer nitrogen-doped graphene, one part of two-layer or three-layer nitrogen-doped graphene is in contact with the insulation layer, the rest part of the two-layer or three-layer nitrogen-doped graphene covers the titanium dioxide nanotube array, and a metal electrode layer is arranged on the two-layer or three-layer nitrogen-doped graphene. The preparation method is simple in process, is suitable for large-scale production, can be used for preparing the ultraviolet photoelectric detectors which are low in cost, free of pollution and high in optical detection capability, and lays a foundation for application of graphene and zinc oxide nanostructures to the ultraviolet photoelectric detectors.

Description

technical field [0001] The invention relates to an ultraviolet photodetector, in particular to an ultraviolet photodetector based on a nanomaterial Schottky junction. Background technique [0002] A photodetector is a device that converts light radiation into electricity, and it uses this feature to perform display and control functions. Ultraviolet photodetector is a device for detecting ultraviolet light, which plays a big role in people's daily life and even in military affairs. In life, it can be used in the fields of ultraviolet measurement in ultraviolet water purification, combustion engineering and flame detection, and ultraviolet detectors are also indispensable instruments in the fields of modern medicine and biology. In the military, ultraviolet detectors also play a very important role. Ultraviolet detection technology can be used in fields such as ultraviolet warning, ultraviolet communication, ultraviolet guidance, and ultraviolet interference. Therefore, man...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/0352H01L31/18
CPCH01L31/0352H01L31/108H01L31/18Y02P70/50
Inventor 罗雷
Owner 罗雷
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