Overload detection circuit of inverter by using on-resistance of MOSFET
A voltage detection circuit and overload detection technology, applied in the direction of measuring electrical variables, measuring current/voltage, instruments, etc., can solve the problems of reducing the working efficiency of the inverter, increasing the product cost, heat loss, etc., and reducing the power consumption , reduce costs and improve work efficiency
Active Publication Date: 2013-10-16
宁波德业变频技术有限公司
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Due to the introduction of sampling resistors into the circuit, when used in high-power inverter applications, high-power sampling resistors are required, generally 5 to 10W sampling resistors are required, and high-power sampling resistors are often expensive, which increases product costs.
And it will consume a certain amount of power on the sampling resistor, which will be converted into heat and lost in vain, thereby reducing the working efficiency of the inverter
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0019] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
[0020] Such as image 3 An inverter overload detection circuit using MOSFET on-resistance is shown, including an H-bridge circuit, a voltage amplifier circuit, a voltage detection circuit, a control circuit and a power tube drive circuit. The H-bridge circuit includes a first power MOSFET tube W1, a second The second power MOSFET W2, the third power MOSFET W3, the fourth power MOSFET W4, the drain of the first power MOSFET W1 and the drain of the third power MOSFET W3 are connected with the DC high voltage output after the inverter transformation The source of the second power MOSFET W2 and the source of the fourth power MOSFET W4 are both grounded to GND, the source of the first power MOSFET W1 is connected to the drain of the second power MOSFET W2, and the first The connection node between the power MOSFET W1 and the second power MOSFET W2...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an overload detection circuit of an inverter by using on-resistance of an MOSFET. The circuit comprises an H bridge circuit, a voltage amplifier circuit, a voltage detection circuit, a control circuit and power tube drive circuits. The negative electrode of a voltage stabilizing diode is connected with an AC output fire wire terminal through a precision resistance; a join node between the precision resistance and the voltage stabilizing diode is connected with the output terminal of the voltage amplifier circuit; the positive electrode of the voltage stabilizing diode is grounded; the output terminal of the voltage amplifier circuit is connected with the voltage detection circuit; one terminal of the control circuit is connected with the voltage amplifier circuit through the voltage detection circuit; and the other terminal of the control circuit is connected with the voltage amplifier circuit and drives the H bridge circuit through the power tube drive circuits. The common precision resistance and the protection voltage stabilizing diode are employed in the overload detection circuit of the inverter, so that power consumption is reduced and meanwhile the common precision resistance and the protection voltage stabilizing diode are very cheap.
Description
technical field [0001] The invention relates to an inverter overload detection circuit, in particular to an inverter overload detection circuit utilizing MOSFET conduction resistance. Background technique [0002] In today's society, fossil energy such as oil and coal is becoming more and more tense and will eventually be completely exhausted. Therefore, the use of renewable energy such as solar energy and wind energy is an inevitable development direction in the energy field in the future. In off-grid power systems such as solar energy and wind energy, an important link is to convert the energy of the stored DC power into AC power for use by electrical appliances that require AC power. The device that converts DC power into AC power is called an inverter, and the commonly used power device in the inverter is a power MOSFET tube. In the design process of the inverter, different types of power MOSFET tubes are selected according to the different requirements of the inverter ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00
Inventor 刘晓
Owner 宁波德业变频技术有限公司