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Fin field effect transistor and method of forming the same
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A fin-type field effect transistor and fin technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve device performance problems and other problems, and achieve stable performance, simple structure, and high carrier mobility. Effect
Active Publication Date: 2015-11-25
SEMICON MFG INT (SHANGHAI) CORP
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[0004] However, as the process node is further reduced, there are problems with the device performance of the prior art FinFET
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no. 1 example
[0068] Please refer to figure 2 , the forming method of the fin field effect transistor according to the first embodiment of the present invention, comprising:
[0069] Step S201, providing a first semiconductor substrate, a second semiconductor substrate located on the surface of the first semiconductor substrate, an oxide layer penetrating through the second semiconductor substrate, and a crystal plane index of the first semiconductor substrate and corresponding to the type of FinFET to be formed;
[0070] Step S203, forming a mask layer covering the second semiconductor substrate, the mask layer having a plurality of first openings exposing the oxide layer;
[0071] Step S205, etching the oxide layer along the first opening until the first semiconductor substrate is exposed;
[0072] Step S207, after etching the oxide layer, forming a fin on the surface of the first semiconductor substrate, where the fin has the same crystal plane index as that of the first semiconductor...
no. 2 example
[0114] Different from the first embodiment of the present invention, in the second embodiment of the present invention, fewer process steps are used to form CMOS fin field effect transistors in the first region and the second region of the semiconductor substrate.
[0115] Please refer to Figure 11 , the method for forming a fin field effect transistor according to the second embodiment of the present invention includes:
[0116] Step S401, providing a first semiconductor substrate including a first region and a second region, a second semiconductor substrate located on the surface of the first semiconductor substrate, a second semiconductor substrate penetrating through the second semiconductor substrate and located in the first region An oxide layer, wherein the first region is used to form a first fin field effect transistor, the second region is used to form a second fin field effect transistor, and the crystal plane index of the first semiconductor substrate is the same ...
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Abstract
Provided is a method for forming a fin field effect transistor. The method comprises: providing a first semiconductor substrate, a second semiconductor substrate disposed on the surface of the first semiconductor substrate, and an oxide layer penetrating the second semiconductor substrate, wherein the crystal face index of the first semiconductor substrate is corresponding to that of the to-be-formed fin field effect transistor in terms of type; forming a mask layer covering the second semiconductor substrate, wherein the mask layer has a plurality of first openings exposing the oxide layer; etching the oxide layer along the first openings until the first semiconductor substrate is exposed; and forming, after the oxide layer is etched, a fin portion on the surface of the first semiconductor substrate, wherein the fin portion has the same crystal face index as the first semiconductor substrate. In the embodiment of the invention, the carrier mobility in a channel region of the formed fin field effect transistor is high and the properties of the fin field effect transistor are stable.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] With the continuous development of semiconductor process technology, process nodes are gradually reduced, and gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size (CD, Critical Dimension) of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and multi-gate devices have been widely used as a substitute for conventional devices. s concern. [0003] Fin field effect transistor (FinFET) is a common multi-gate device, figure 1 A schematic diagram of a three-dimensional structure of a fin field effect transistor in the prior art is shown....
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