Infrared multi-wavelength absorber
A multi-wavelength absorber technology, which is applied in the field of infrared electromagnetic wave absorption and detection, can solve the problems of insensitivity to structural polarization, difficult control of absorption characteristics, and large thickness of resonant absorbers, so as to achieve simple structure, easy control of absorption characteristics, and improved The effect of sensitivity
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Embodiment 1
[0023] See attached figure 1 , with figure 2 , with image 3 , the infrared dual-wavelength absorber proposed by the present invention includes substrate I1, structural layer I2, adhesive layer I3, dielectric layer 4, adhesive layer II5 and structural layer II6 in sequence, the material of the substrate I1 is Si, the structural layer I2 and the structural layer The material of layer Ⅱ6 is Au, the material of adhesion layer Ⅰ3 and adhesion layer Ⅱ5 is Ti, and the material of dielectric layer 4 is Al 2 o 3 The length of the double cross structure in the x direction is 1.2 μm, the length in the y direction is 0.8 μm, the width of the double cross arms is 0.3 μm, the period in the x direction is 2 μm, and the period in the y direction is 1.2 μm; The thickness of the dielectric layer 4 is 0.05 μm, and the thickness of the adhesion layer I3 and the adhesion layer II5 is 5 nm. See attached Figure 4 , the infrared multi-wavelength absorber achieves absorptivity of 99.43%, 89.24...
Embodiment 2
[0025] See attached figure 1 , with figure 2 , with image 3 , the infrared dual-wavelength absorber proposed by the present invention includes substrate I1, structural layer I2, adhesive layer I3, dielectric layer 4, adhesive layer II5 and structural layer II6 in sequence, the material of the substrate I1 is Si, the structural layer I2 and the structural layer The material of layer Ⅱ6 is Au, the material of adhesion layer Ⅰ3 and adhesion layer Ⅱ5 is Ti, and the material of dielectric layer 4 is Al 2 o 3 The length of the double cross structure in the x direction is 1.4 μm, the length in the y direction is 0.8 μm, the width of the double cross arms is 0.3 μm, the period in the x direction is 2 μm, and the period in the y direction is 1.2 μm; The thickness of the dielectric layer 4 is 0.05 μm, and the thickness of the adhesion layer I3 and the adhesion layer II5 is 5 nm. See attached Figure 5 , the infrared multi-wavelength absorber achieves absorptivity of 99.83%, 88.19...
Embodiment 3
[0027] See attached figure 1 , with figure 2 , with image 3 , the infrared dual-wavelength absorber proposed by the present invention includes substrate I1, structural layer I2, adhesive layer I3, dielectric layer 4, adhesive layer II5 and structural layer II6 in sequence, the material of the substrate I1 is Si, the structural layer I2 and the structural layer The material of layer Ⅱ6 is Au, the material of adhesion layer Ⅰ3 and adhesion layer Ⅱ5 is Ti, and the material of dielectric layer 4 is Al 2 o 3 The length of the double cross structure in the x direction is 1.6 μm, the length in the y direction is 0.8 μm, the width of the double cross arms is 0.3 μm, the period in the x direction is 2 μm, and the period in the y direction is 1.2 μm; The thickness of the dielectric layer 4 is 0.05 μm, and the thickness of the adhesion layer I3 and the adhesion layer II5 is 5 nm. See attached Image 6 , the infrared multi-wavelength absorber achieves absorptivity of 99.34%, 85.34%...
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