The invention discloses a
visible light communication light source based on a nonpolar and semipolar surface and a corresponding patterned
sapphire substrate. A
sapphire substrate is selected to be processed into
grating-shaped strip-shaped patterns; the angle of the side wall of a step is optimized in the
etching process, and the angle of a growth surface of the next step is optimized; a barrierlayer is designed on the patterned
sapphire substrate, and a
silicon oxide film is adopted as an epitaxial
barrier layer; a GaN layer, an N-type GaN layer, an InGaN / GaN multi-
quantum well layer, an electronic
barrier layer and a p-type GaN layer are sequentially grown by adopting a chemical
vapor phase epitaxy method, and the growth method of the GaN layer, the N-type GaN layer, the InGaN / GaN multi-
quantum well layer, the electronic
barrier layer and the p-type GaN layer is disclosed. The influence of
quantum-limited Stokes effect is weakened by utilizing the advantages of non-polar / semipolarsurface on III-group
nitride polarization regulation, the overlapping of
electron-hole wave functions on real space is increased, and the
radiation recombination proportion and the rate of current carriers are improved, and therefore, the method provided by the invention is suitable for effectively improvement of the
visible light communication performances by adopting the nonpolar and semipolar surface technologies.