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Infrared multi-wavelength absorber

A multi-wavelength, absorber technology, used in the field of infrared electromagnetic wave absorption and detection, can solve the problems of large thickness of the resonant absorber, insensitive to structural polarization, and difficult to control absorption characteristics, and achieves simple structure, improved sensitivity, and easy absorption characteristics. control effect

Inactive Publication Date: 2015-07-01
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the shortcomings of the traditional resonant absorber, such as large thickness, difficult control of absorption characteristics, and insensitivity to polarization of the existing metamaterial dual-wavelength absorber structure, the present invention proposes a method that is easy to control thickness and absorption characteristics, and has polarization characteristics. Infrared Multi-Wavelength Absorber

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Embodiment 1

[0021] See attached figure 1 , Attached figure 2 , Attached image 3 The infrared dual-wavelength absorber proposed by the present invention includes a substrate I1, a structural layer I2, an adhesive layer I3, a dielectric layer 4, an adhesive layer II5, and a structural layer II6. The material of the substrate I1 is Si, the structural layer I2 and the structure The material of layer Ⅱ6 is Au, the material of adhesion layer Ⅰ3 and adhesion layer Ⅱ5 are both Ti, and the material of dielectric layer 4 is Al 2 O 3 The length of the double cross structure in the x direction is 1.2 μm, the length in the y direction is 0.8 μm, the width of the double cross arm is 0.3 μm, the period in the x direction is 2 μm, and the period in the y direction is 1.2 μm; the thickness of the structural layer Ⅰ 2 and the structural layer Ⅱ 6 are both It is 0.1 μm, the thickness of the dielectric layer 4 is 0.05 μm, and the thickness of the adhesion layer I3 and the adhesion layer II5 is 5 nm. See atta...

Embodiment 2

[0023] See attached figure 1 , Attached figure 2 , Attached image 3 The infrared dual-wavelength absorber proposed by the present invention includes a substrate I1, a structural layer I2, an adhesive layer I3, a dielectric layer 4, an adhesive layer II5, and a structural layer II6. The material of the substrate I1 is Si, the structural layer I2 and the structure The material of layer Ⅱ6 is Au, the material of adhesion layer Ⅰ3 and adhesion layer Ⅱ5 are both Ti, and the material of dielectric layer 4 is Al 2 O 3 The length of the double cross structure in the x direction is 1.4μm, the length in the y direction is 0.8μm, the width of the double cross arm is 0.3μm, the period in the x direction is 2μm, and the period in the y direction is 1.2μm; the thickness of the structural layer I2 and the structural layer II6 are both It is 0.1 μm, the thickness of the dielectric layer 4 is 0.05 μm, and the thickness of the adhesion layer I3 and the adhesion layer II5 is 5 nm. See attached ...

Embodiment 3

[0025] See attached figure 1 , Attached figure 2 , Attached image 3 The infrared dual-wavelength absorber proposed by the present invention includes a substrate I1, a structural layer I2, an adhesive layer I3, a dielectric layer 4, an adhesive layer II5, and a structural layer II6. The material of the substrate I1 is Si, the structural layer I2 and the structure The material of layer Ⅱ6 is Au, the material of adhesion layer Ⅰ3 and adhesion layer Ⅱ5 are both Ti, and the material of dielectric layer 4 is Al 2 O 3 The length of the double cross structure in the x direction is 1.6μm, the length in the y direction is 0.8μm, the width of the double cross arm is 0.3μm, the period in the x direction is 2μm, and the period in the y direction is 1.2μm; the thickness of the structural layer I2 and the structural layer II6 are both It is 0.1 μm, the thickness of the dielectric layer 4 is 0.05 μm, and the thickness of the adhesion layer I3 and the adhesion layer II5 is 5 nm. See attached ...

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Abstract

The invention discloses an infrared multi-wavelength absorber, which comprises a substrate I 1, a structural layer I 2, an adhesive layer I 3, a dielectric layer 4, an adhesive layer II 5 and a structural layer II 6 in sequence, wherein the structural layer II 6 consists of a double cross structure array; the double cross structures are formed by splicing two cross structures; the angles of arrays in both x and y directions are 90 degrees; and the cycles in both x and y directions are of wavelength scale. According to the infrared multi-wavelength absorber, multi-wavelength absorption of an infrared band is realized by using the structure arrays of a single size; the infrared multi-wavelength absorber has a simple structural form and small thickness and is easy in control of the absorption characteristic; and the infrared multi-wavelength absorber has polarization characteristic and has broad application prospect in the application aspect of biosensors. A large volume of experimental data proves that the infrared multi-wavelength absorber has superior performance.

Description

Technical field [0001] The invention relates to an infrared electromagnetic wave absorber, in particular to an infrared multi-wavelength absorber based on a double cross structure and having polarization characteristics, belonging to the technical field of infrared electromagnetic wave absorption and detection. Background technique [0002] Infrared absorbers are the basic components for making photoelectric detectors, miniature bolometers, solar photovoltaic thermal converters, and thermal imaging systems. The traditional infrared electromagnetic wave resonant absorber is realized by a multilayer structure, and the structures are separated by a quarter-wavelength dielectric layer. There are some difficult problems when applying this kind of resonance absorber. First of all, the thickness of the absorber is required to be at least a quarter wavelength, and if these absorbing layers are connected in series, their thickness must be significantly increased in order to expand the pe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q17/00G02F1/01
Inventor 黎永前苏磊寿宸
Owner NORTHWESTERN POLYTECHNICAL UNIV
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