Heterogeneous material structured multilayer film wave absorber and manufacturing method thereof

A technology of multi-layer thin films and heterogeneous materials, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of large volume and weight of the absorber, narrow bandwidth of the absorber, and high manufacturing cost , to achieve the effects of high manufacturing efficiency, low manufacturing process cost, and reduced volume and weight

Active Publication Date: 2020-04-10
XIAN TECHNOLOGICAL UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a polarization-insensitive heterogeneous material structured multi-layer film absorber and its preparation method to solve the problem of large volume and w

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heterogeneous material structured multilayer film wave absorber and manufacturing method thereof
  • Heterogeneous material structured multilayer film wave absorber and manufacturing method thereof
  • Heterogeneous material structured multilayer film wave absorber and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] Example one:

[0025] Such as figure 1 As shown, the present invention provides a heterogeneous material structured multilayer thin film absorber, this embodiment is a six-layer thin film absorber, including a silicon substrate, the top of the silicon substrate is provided with two multi-layer units, namely metal -Low refractive index layer-High refractive index layer (MLH), each multi-layer unit includes Ag thin film and SiO layer sequentially stacked from bottom to top 2 Thin film and SiN x The thin film and the two multi-layer units have a pyramid array structure as a whole. The size of the silicon substrate is 4 μm×4 μm, and the height of the pyramid array structure formed by the two multi-layer units is 2 μm. The film thickness of each multi-layer unit is set as follows: figure 1 As shown, the thickness of the Ag film in the film layer unit is 40nm, and the SiO 2 The thickness of the film is 490nm, SiN x The thickness of the film is 490 nm. Since the thickness of the...

Example Embodiment

[0033] Embodiment two:

[0034] Same as embodiment 1, each "metal-low refractive index layer-high refractive index layer (MLH)" absorbing structure is designed as a multi-layer unit. In this embodiment, there are 3 multi-layers on the top of the silicon substrate. Layer unit, the 3 multi-layer unit is a pyramid array structure as a whole. The size of the silicon substrate is 4 μm×4 μm, and the height of the pyramid array structure composed of three multi-layer units is 1.8 μm. The film thickness of each film unit is set as follows: Ag film thickness is 200nm, SiO 2 The thickness of the film is 200nm, SiN x The thickness of the film is 200nm, such as Figure 4 Shown.

[0035] The preparation method of said nine-layer thin film absorber includes the following steps:

[0036] 1. Using magnetron sputtering technology to deposit a metal thin film on the surface of the silicon substrate, and by controlling the deposition time, the thickness of the Ag film is 200nm.

[0037] 2. The plasma ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a heterogeneous material structured multilayer film wave absorber and a manufacturing method thereof. A structured multilayer film comprises a silicon substrate, an Ag film, aSiO2 film and a SiNx film which are sequentially stacked from bottom to top, the whole structured multilayer film is a micro-pyramid structure array. During preparation, a single-point diamond turningtechnology is adopted to directly complete forming of the micro-pyramid structure in the heterogeneous material multi-layer thin film. The heterogeneous material structured multilayer film wave absorber provided by the invention shows obvious wave absorbing characteristics on visible light waves and infrared band light waves; the heterogeneous material structured multilayer film wave absorber containing the metal-medium can realize absorption of electromagnetic wave energy, is low in preparation cost and high in efficiency, and has important practical value in the fields of photovoltaics andinvisibility.

Description

technical field [0001] The invention relates to the field of electromagnetic wave absorption, in particular to a heterogeneous material structured multi-layer film wave absorber and a preparation method thereof. Background technique [0002] Absorbing material refers to a class of materials that can effectively absorb and dissipate the energy of electromagnetic waves irradiated on its surface. It is an important functional material. Absorbing materials can be divided into coating type and structure type. Among them, the coated wave-absorbing material is generally made by mixing absorbents such as powder and fiber with wave-absorbing properties with binders and curing agents in a certain proportion. F-117A, B-2, F-22, etc. The fighter plane uses coated absorbing materials on the strong scattering source of the fuselage. The structural absorbing material is a multifunctional composite material. Compared with the coated absorbing material, the biggest advantage of the struct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01Q17/00C23C14/16C23C14/35C23C16/34C23C16/40
CPCC23C14/165C23C14/35C23C16/345C23C16/402H01Q17/008
Inventor 刘卫国葛少博周顺杨鹏飞李世杰阳志强黄岳田
Owner XIAN TECHNOLOGICAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap