Method for realizing dual-face alignment photoetching by utilization of one-face exposure machine
A technology of exposure machine and aligning light, which is applied in microlithography exposure equipment, photolithography process of pattern surface, photolithography process exposure device, etc., can solve the problem of inability to realize double-sided lithography, and reduce process cost. Effect
Inactive Publication Date: 2015-04-22
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] In order to reduce the cost of double-side lithography process and solve the problem that ordinary single-side exposure machine cannot realize double-side lithography, a simple method of double-side alignment lithography with the help of transparent substrate is proposed
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0022] Below in conjunction with accompanying drawing this method is described in further detail:
[0023] like Figure 1-2 As shown, the first mask 1 and the second mask 2 are designed to correspond to the required patterns of the upper surface 3-1 and the lower surface 3-2 of the substrate respectively, and a center-symmetric inner layer pair is designed on the first mask 1. Alignment mark 1-1 and outer layer alignment mark 1-2, inner layer alignment mark 1-1 is within the size range of substrate 3, outer layer alignment mark 1-2 is designed outside the size range of substrate 3, smaller than transparent The size of the substrate 4, through the inner layer alignment mark 1-1 and the inner layer alignment mark 4-3 of the transparent substrate 4, will make the patterned transparent substrate surface 4-1 and the substrate upper surface 3-1. Alignment and film bonding, while the outer layer alignment mark 1-2 is used for photolithography on the lower surface 3-2 of the substrat...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a method for realizing dual-face alignment photoetching by utilization of a one-face exposure machine, and belongs to the photoelectric and micro-nano processing technical fields. A masking plate A and a masking plate B are designed, and respectively corresponds to the required graphs of a surface a and a surface b of a base sheet. Centrosymmetric alignment marks of inner and outer layers are designed on the masking plate A. The alignment mark of the inner layer is arranged in the base sheet size range. First, photoetching is carried out on the surface a of the base sheet by utilization of the masking plate A. Then photoetching is carried out on a surface of a transparent substrate by utilization of the masking plate A. The surface, with finished photoetched graphs, of the transparent substrate is confronted with the surface a, with finished photoetched graphs, of the base sheet. After the base sheet and the substrate are bonded, photoetching is carried out on the surface b of the base sheet by utilization of the masking plate B. Finally the base sheet and the transparent substrate are separated by utilization of a heating or dissolving method, and a base sheet with dual-face alignment graphs is obtained. Dual-face alignment is achieved by means of a transparent substrate, dual-face photoetching is realized by utilization of a common one-face exposure machine, and the dual-face photoetching process cost is lowered.
Description
technical field [0001] The invention belongs to the field of photoelectric technology and micro-nano processing technology, and relates to a method for realizing double-side alignment photolithography by using a single-side exposure machine. Background technique [0002] Double-sided lithography technology is a widely used micro-nano processing technology for manufacturing semiconductor devices and optical devices. The manufacture of devices such as pressure sensors, quartz crystal oscillators, microelectronic machining, hybrid circuits, power semiconductor devices, bulk acoustic wave devices, and discharge diodes requires the use of double-sided lithography to precisely map the front and back sides of the substrate. Align the exposure. At present, the double-sided lithography process is mostly completed by double-sided exposure machines. According to the different alignment principles, it can be roughly divided into two types: one is to use an infrared microscope to align ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F9/00
Inventor 王泰升鱼卫星卢振武孙强
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI