A Method for Measuring Reversible Domain Polarization Strength of Ferroelectric Thin Film Nucleation
A technology of ferroelectric thin film and polarization intensity, which is applied in the direction of measuring electricity, measuring devices, and measuring electrical variables, etc., which can solve the practical application of reversible domain characteristics of nucleation, the inability to effectively control the change of polarization intensity, and the difficulty of measuring nucleation Issues such as reversible domain polarization
Active Publication Date: 2017-12-29
FUDAN UNIV
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Problems solved by technology
However, current commercial ferroelectric testers, such as Radiant Premier I / II and aixACCT TF2000 analyzer, are based on improved Virtual Ground or Sawyer-Tower circuits, by applying a series of AC signals below 1 megahertz (MHz) to the ferroelectric film , and then test the P-V hysteresis loop of the ferroelectric thin film. These methods are difficult to measure the polarization intensity of the nucleation reversible domain, and cannot effectively control the change of the polarization intensity, which makes the nucleation reversible domain characteristics difficult for practical application.
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[0035] Hereinafter, the present invention is described more specifically in reference examples with reference to the drawings, and the present invention provides preferred embodiments, but should not be construed as being limited to the embodiments set forth herein.
[0036] figure 1 It is a schematic diagram of the forward expansion, growth and contraction of the nucleation and reversible electric domains of the ferroelectric film, showing that the nucleation and reversible electric domains correspondingly shrink or expand and grow with a slight decrease or a slight increase of the applied voltage. The physical and theoretical mechanism of the nucleation and reversible domain change with the applied voltage is mainly explained.
[0037] The pulse signals required for the test of the embodiment of the present invention are all edited with an Agilent 81150A arbitrary waveform signal generator, the current is recorded by an LCWR 6200A oscilloscope, and the total series resistanc...
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The invention belongs to the technical field of solid-state dielectric applications, in particular to a method for measuring the polarization intensity of reversible electric domains formed by ferroelectric thin films. The domain polarization direction of the prepolarized ferroelectric film is antiparallel to the applied voltage. After applying voltages with different pulse widths, the surface density of the discharge charge of the ferroelectric capacitor and the reverse electric charge of the ferroelectric film are measured at different ferroelectric capacitor voltages. Domain polarization intensity; the direction of the domain polarization of the prepolarized ferroelectric film to the parallel direction of the applied voltage, after applying voltages of different pulse widths, the surface density of the discharge charge of the ferroelectric capacitor is measured when the voltage of the ferroelectric capacitor is different; the final can be Calculate the ferroelectric thin film nucleation reversible domain polarization. The method of the invention can be adapted to various situations, has high measurement accuracy, is convenient for deeply understanding the kinetic mechanism of ferroelectric thin film nucleation electric domain growth motion, and can be applied in new devices such as ultra-high dielectric response.
Description
technical field [0001] The invention belongs to the technical field of solid-state dielectric applications, and in particular relates to a method for measuring the polarization intensity of a ferroelectric thin film nucleating reversible domain. Background technique [0002] Ferroelectric materials have high spontaneous polarization and large dielectric constant and can be used in high-precision infrared detectors, high-dielectric capacitors, microwave devices with electric field modulation, phase shifters and energy harvesting systems, etc. With the improvement of the integration density of modern electronic circuits and devices, the size of device units has been greatly reduced, and the size effect of ferroelectric materials has become more and more obvious; at the same time, these devices require ferroelectric materials to have higher dielectric responses to improve the sensitivity of related devices , conversion efficiency and other technical indicators. [0003] The el...
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IPC IPC(8): G01R31/00
Inventor 江安全陈志辉
Owner FUDAN UNIV