A method for manufacturing through-hole metal interconnection applied to wafer-level packaging of micro devices
A wafer-level packaging, metal interconnection technology, applied in the process of producing decorative surface effects, microstructure devices, manufacturing microstructure devices, etc. Difficult to pattern and other problems, to achieve the effect of saving production costs, improving low reliability, and simplifying steps
Active Publication Date: 2015-09-02
XIAMEN UNIV
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Problems solved by technology
[0013] The purpose of the present invention is to overcome problems such as chipping at the bottom of through-holes that affects electrical reliability in the existing wafer-level packaging process, and the difficulty in patterning the surface of wafers with through-hole structures, etc., and provide a technology based on air flotation deposition. , a manufacturing method suitable for through-hole metal interconnection of micro-device wafer-level packaging in micro-electro-mechanical systems, which can realize through-hole interconnection of various shapes The manufacturing method includes a manufacturing method suitable for through-hole metal interconnection before wafer-level packaging of micro-device in micro-electromechanical systems or a manufacturing method suitable for through-hole metal interconnection after wafer-level packaging of micro-device in micro-electro-mechanical systems
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[0035] see figure 2 , the manufacturing method of the through-hole metal interconnection before the wafer-level packaging of the micro-device described in the first technical solution of the present invention, specifically comprises the following steps:
[0036] Step 1, providing a silicon wafer 01 with unlimited resistivity, using a diffusion process to dope the front side of the silicon wafer 01 to obtain a silicon wafer 01 with a highly doped silicon layer 7, such as figure 2 as shown in (a);
[0037] Step 2, provide the first substrate 02, the first substrate 02 selects Pyrex7740 glass (the material of the substrate 02 is not limited to inorganic oxide, it can also be a semiconductor material, such as silicon, etc. In particular, if the first substrate 02 is For semiconductor materials, the entire surface of the first substrate 02 is required to be covered with an insulating layer, and if the first substrate 02 is an inorganic oxide, an insulating layer is not required)...
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Abstract
The invention discloses a manufacturing method applied to micro device wafer level encapsulating through hole metal interconnection, and relates to the encapsulating technology of micro devices. The manufacturing method applied to the micro device wafer level encapsulating through hole metal interconnection in a micro electro mechanical system is based on an air flotation deposition technology, and can achieve the interconnection of through holes of various shapes. The manufacturing method applied to the micro device wafer level encapsulating through hole metal interconnection of the micro electro mechanical system comprises a manufacturing method applied to the micro device wafer level pre-encapsulating through hole metal interconnection of the micro electro mechanical system or a manufacturing method applied to the micro device wafer level post-encapsulating through hole metal interconnection of the micro electro mechanical system. The manufacturing method applied to the micro device wafer level encapsulating through hole metal interconnection of the micro electro mechanical system can solve the problems that in an existing wafer level encapsulating process, the edge breakage phenomenon influencing electrical reliability prevails among the bottoms of through holes and patterning is difficult to carry out on the surfaces of wafers with through hole structures.
Description
technical field [0001] The invention relates to a micro-device packaging process, in particular to a manufacturing method for through-hole metal interconnection applied to micro-device wafer-level packaging in micro-electromechanical systems. Background technique [0002] Micro-devices (such as sensors) in micro-electromechanical systems (MEMS) are widely used in aviation, automobiles, electronics, etc., such as micro-accelerometers, gyroscopes, pressure sensors, etc. Since the performance of the inertial sensor is directly related to its working vacuum, its packaging process is a key process in MEMS manufacturing. MEMS packaging can be divided into two categories, wafer-level packaging and device-level packaging. Since the packaging effect and cost of wafer-level packaging are much higher than that of chip-level packaging, wafer-level packaging is the current mainstream trend. [0003] For example, for a sensor made with a wafer-level packaging structure, since it is neces...
Claims
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IPC IPC(8): B81C1/00
Inventor 孙道恒占瞻虞凌科杜晓辉王小萍何杰王凌云
Owner XIAMEN UNIV