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Reflective mask and mask material

A reflective and reticle technology, applied in the field of reflective reticle and reticle materials, can solve the problems of difficult to meet specifications and high cost of EUV reticle, and achieve the effects of low management cost, long service life and low cost

Active Publication Date: 2015-09-30
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cost of EUV masks is very high due to the difficulty of meeting strict EUV mask specifications

Method used

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  • Reflective mask and mask material
  • Reflective mask and mask material
  • Reflective mask and mask material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Embodiments relate to reflective masks, which are preferably but not limited to be used in Extra Ultraviolet Lithography.

[0030] figure 1 It is a schematic diagram of a reflective mask 1 according to an embodiment of the present invention. Such as figure 1 As shown, the reflective mask 1 can operate according to the principle of a distributed Bragg reflector. The reflective mask 1 may have two pattern areas ( 10 and 20 ), and the two pattern areas ( 10 and 20 ) are disposed on two opposite sides of the reflective mask 1 . The reflective mask 1 may include a substrate 11 , a first reflective layer 12 , a second reflective layer 13 , a first patterned absorbing layer 14 , and a second patterned absorbing layer 15 . The substrate 11 has a first surface 111 and a second surface 112 . The first reflective layer 12 is directly formed on the first surface 111 . The second reflective layer 13 is directly formed on the second surface 112 . The first patterned absorbing l...

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PUM

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Abstract

The invention discloses a reflective photomask and photomask material. The photomask comprises a substrate, a first reflective multilayer, a second reflective multilayer, a first patterned absorbing layer and a second patterned absorbing layer. Floor. The substrate includes a first surface and a second surface, wherein the first surface is opposite to the second surface. The first reflective complex layer is formed on the first surface of the substrate. The second reflective layer is formed on the second surface of the substrate. The first patterned absorbing layer is formed on the first reflecting layer. The second patterned absorption layer is formed on the second reflective layer.

Description

technical field [0001] The present invention relates to a photolithographic mask; in particular, it relates to a reflective mask and mask material. Background technique [0002] Advances in photolithography technology allow semiconductor integrated circuits to be made smaller and have better performance. Deep ultraviolet light (deep ultraviolet) with a wavelength of 248, 193 or 157 nanometers has been used to make chips. Several candidate methods using extreme ultraviolet light (EUV), X-rays, electrons, and ion beams are competing to become the next generation of photolithography. [0003] Perhaps the most promising contender is extreme ultraviolet lithography (EUV lithography; EUVL), which uses EUV light with a wavelength of about 10 to 15 nanometers. The lack of materials that can penetrate EUV light has led EUVL to use reflective rather than refractive optics to expose the wafer. EUV light can be generated using discharge produced plasma. The generated EUV light is di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/24G03F1/58
CPCG03F1/24G03F1/58G03F1/50
Inventor 张家铭
Owner NAN YA TECH