Measurement methods

Abstract

A measurement method includes: placing a wafer with a surface photoresist layer on a detection bed, and forming a photoresist pattern on the photoresist layer; using a scanning electron microscope to measure twice line width of the pattern to be measured on the wafer, marking data of first measurement as first measurement data, and marking data of second measurement as second measurement data; judging whether the first measurement data is in a first reference value range or not and whether the second measurement data is in the second reference value range or not, and comparing the first measurement data to the second measurement data to obtain measurement results when the first measurement data and the second measurement data are in the first reference value range and the second reference value range respectively. The measurement method has the advantages that the shape of the photoresist pattern can be determined while the line width of the photoresist pattern on the wafer is acquired, and measurement is more accurate and effective.

Description

technical field [0001] The invention relates to a measuring method, in particular to a measuring method for the pattern size of a semiconductor device. Background technique [0002] With the development of technology in the semiconductor field, the critical dimensions (Critical Dimension, CD) of semiconductor devices are getting smaller and smaller, and the integration of chips is getting higher and higher, which puts more and more stringent requirements on the semiconductor manufacturing process. In the process, the error of each step is reduced as much as possible, and the failure of the device caused by the error is reduced. [0003] In the semiconductor manufacturing process, photolithography occupies an important position as a core technology. In a standard CMOS process, dozens of lithography steps are required, and due to factors such as the resolution of the lithography machine and the accuracy of alignment, there are errors in the lithography process. [0004] In t...

AI Technical Summary

Problems solved by technology

In the process of measuring the line width n of the photoresist pattern 120 through the scanning electron microscope, when the obtained measurement result is 60nm, it is difficult to determine whether the line width n of the formed photoresist pattern 120 is changed due to an error in the patterning process. 10nm larger, or when measuring the line width n of the photoresist pattern 120 by scanning electron microscopy, the width m of the groove 130 formed by the two photoresist patterns 120 is mistakenly measured as the line width n of the photoresist pattern 120, which is caused The measurement is wrong, and it is impossible to know whether the measured part is the photoresist pattern or the substrate exposed by the photoresist pattern according to the pattern obtained by the scanning electron microscope

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