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Metal interconnecting wire electromigration test structure

A technology of testing structure and wiring, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of test failure, high current density of the anode part 103b, open circuit, etc., to reduce the current density and improve the electromigration effect. , the effect of improving the success rate

Active Publication Date: 2013-12-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, it is found in actual production that when the electromigration test of the second metal layer 101 is carried out using the above-mentioned metal interconnection electromigration test standard structure, test failures often occur. The thickness of 103b is large (some even more than 10 times), so when the current flows from the anode part 103b into the through-hole filling 102b, the current density of the anode part 103b is too large, and it is easier to cause electromigration between the through-hole filling 102b and the anode part Unexpected void (Void) 105 occurs at the contact of 103b, the anode part 103b fails, resulting in disconnection of the connection between the anode part 103b and the via filling 102, and the electromigration test of the second metal layer 101 fails

Method used

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  • Metal interconnecting wire electromigration test structure
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  • Metal interconnecting wire electromigration test structure

Examples

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Embodiment 1

[0031] Please refer to Figure 2A , 2B , 2C, the present embodiment provides a metal interconnection electromigration test structure, including a first metal layer having a first end 201a and a second end 201b, a second metal layer 203 to be electromigration tested, and the two layers The first through-hole filling 202a and the second through-hole filling 202b are in direct contact, the first end 201a is electrically connected to the second metal layer 203 through the first through-hole filling 202a, and the second end 201b is electrically connected through the second through-hole filling 202a. The via filling 202b is electrically connected to the second metal layer 203 .

[0032] In this embodiment, the metal interconnection electromigration test structure further includes a node pad 204 located at the first end 201a, the node pad 204 is used for applying a test voltage and a sensing voltage, and has three input terminals 204a, 204b, 204c, the first end 201a isolates the co...

Embodiment 2

[0036] Please refer to Figure 3A and 3B , the present embodiment provides a metal interconnection electromigration test structure, including a first metal layer having a first end 301a and a second end 301b, a second metal layer 303 to be electromigration tested, and a metal layer in direct contact with the two layers. First and second via filling 302a, 302b, the first end 301a is electrically connected to the second metal layer 303 through the first via filling 302a, and the second end 301b is connected to the second metal layer 303 through the second via filling 302b The second metal layer 303 is electrically connected.

[0037] In this embodiment, the metal interconnection electromigration test structure further includes a first node pad 304 located at the first end 301a and a first node pad 304' located at the second end 301b; the first The node pad 304 is used for applying test voltage and sensing voltage, and has three input ends 304a, 304b, 304c, and the first end 30...

Embodiment 3

[0041] Please refer to Figure 4A and 4B , the present embodiment provides a metal interconnection electromigration test structure, including a first metal layer having a first end 401a and a second end 401b, a second metal layer 403 to be electromigration tested, and a metal layer in direct contact with the two layers. The first through-hole filling 402a and the second through-hole filling 402b, the first end 401a is electrically connected to the second metal layer 403 through the first through-hole filling 402a, and the second end 401b is filled through the second through-hole 402b is electrically connected to the second metal layer 403 .

[0042] In this embodiment, the metal interconnection electromigration test structure further includes a first node pad 404 located at the first end 301a and a first node pad 404' located at the second end 401b; the first The node pad 404 is used for applying test voltage and sensing voltage, and has two input ends 404a, 404b. The first ...

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Abstract

The invention provides a metal interconnecting wire electromigration test structure. Multiple input ends of a node mat access one corresponding end of a first metal layer in different directions, currents flowing into the filling contact position of the first metal layer and a through hole are shunted and collected in a shunting and collecting mode, the density of the currents of the surrounding area of the contact position is effectively reduced, the electromigration effect of the first metal layer is improved, an unexpected hole in the first metal layer of the surrounding area of the contact position is avoided, the electromigration test of a second metal layer is guaranteed to be carried out successfully, and the success rate of the metal interconnecting wire electromigration test is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a metal interconnection electromigration test structure. Background technique [0002] In the integrated circuit manufacturing process, the electro-migration (EM) phenomenon of metal interconnection lines causes open and short circuits of metal interconnection lines, which increases device leakage current. As the scale of integrated circuits continues to expand, the size of devices continues to shrink, the width of metal interconnection lines continues to decrease, and the current density continues to rise, making them more prone to failure due to electromigration, which has become an important reliability issue. [0003] The direct cause of electromigration is the movement of metal atoms. The electromigration phenomenon of integrated circuits means that when the integrated circuit device is working, a certain current passes through the metal interconnection line, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544
CPCH01L2924/0002
Inventor 陈芳甘正浩
Owner SEMICON MFG INT (SHANGHAI) CORP
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