Tracking path for controlling opening of sense amplifier and static random access memory (SRAM) using tracking path

Abstract

The invention discloses a tracking path for controlling opening of a sense amplifier and a static random access memory (SRAM) using the tracking path. The tracking path includes a bit line electric-discharge copy module and a leakage current simulation module, wherein the bit line electric-discharge copy module used for simulation of bit line electric-discharge of memory cells in the static random access memory (SRAM) is connected to a control end of the sense amplifier through a copy bit line, and the leakage current simulation module used for simulation of leakage current of the memory cells in the static random access memory (SRAM) is connected to the control end of the sense amplifier through the copy bit line. In the tracking path disclosed in the invention, the leakage current simulation module used for simulation of the leakage current of the memory cells in the static random access memory (SRAM) is added on the basis of a tracking path in the prior art, the increased bit line electric-discharge time caused by the leakage current of other no-read-write memory cells which are in the SRAM and lie in the same column can be compensated by the leakage current simulation module, so that the time delay of SAE (sense amplifier enable) signal after passing through the tracking path is more approximate to the real electric-discharge time of the memory cell bit line, further the opening of the sense amplifier can be effectively controlled, and the reading speed of the SRAM can be accelerated.

Description

technical field [0001] The invention relates to a SRAM (Static RAM, static random read-write memory) circuit, in particular to a tracking circuit for controlling the opening of a sensitive amplifier in the SRAM and an SRAM using the tracking circuit. Background technique [0002] As the functions of digital integrated circuits become more and more complex and the scale is larger and larger, static memory has become a very important part of digital systems, and memory with high storage speed and low power consumption has become the mainstream of static memory development. SRAM (Static RAM, static random read-write memory) has the advantages of no need to refresh, easy to use and fast speed. Therefore, in recent years, SRAM has been widely used in mobile phones, computers and other portable devices, and high speed and low power consumption have become The inevitable trend of SRAM development. [0003] figure 1 A partial structure of the SRAM is shown. Wherein, the storage f...

AI Technical Summary

Problems solved by technology

Therefore, affected by the ever-increasing leakage current, the time of passing through the SAE signal generated by the tracking circuit 1 cannot accurately copy the discharge time of the bit line, resulting in the inability to accurately control the turn-on time of the sense amplifier 3, which increases the probability of SRAM misreading Big

In order to reduce the occurrence of this situation, a long turn-on time of the sense amplifier 3 is usually reserved so that the SRAM can improve the yield rate, which will definitely affect the access speed of the SRAM

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