Floating memory capacitor and memory inductor simulator based on memory resistor

Abstract

The invention discloses a floating memory capacitor and memory inductor simulator based on a memory resistor. The floating memory capacitor and memory inductor simulator based on the memory resistor comprises a first differential difference current conveyor, a second differential difference current conveyor, the memory resistor, a resistor and a reactance element, wherein the X end of the first differential difference current conveyor is connected with the ground after being connected with the memory resistor, one input end of the second differential difference current conveyor is connected with the ground, the other input end of the second differential difference current conveyor is connected with the in-phase current output end of the first differential difference current conveyor and one end of the reactance element, the other end of the reactance element is connected with the ground, the X end of the second differential difference current conveyor is connected with the ground after being connected with the resistor, the in-phase current output end and the reverse current output end of the second differential difference current conveyor are connected with two input ends of the first differential difference current conveyor respectively. The floating memory capacitor and memory inductor simulator based on the memory resistor has the advantages that the simulator can effectively replace an actual memory capacitor and memory inductor to design a circuit, voltage at the two ends of the memory capacitor and voltage at the two ends of the memory inductor are not limited, and the simulator can be connected with other electronic elements flexibly.

Description

technical field [0001] The invention relates to the technical field of memristors, in particular to a floating memristor and a memristor simulator based on memristors. Background technique [0002] Since the successful realization of memristor in Hewlett-Packard Laboratory in the United States in May 2008, memristor has been widely used in the fields of non-volatile memory, artificial neural network and circuit design. Based on the memristor, Professor Cai Shaotang proposed the concepts of memcapacitor and meminductor in December 2008. The two new memory elements have the same memory function as memristors, but memcapacitors and memristors can store energy, while memristors cannot. The emergence of these memory elements represents a whole new uncharted territory, which has the potential to lead to a series of new revolutions in the field of electronics. [0003] As nanoelectronic components, memcapacitors, memristors, and memristors still exist only in laboratory environme...

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Problems solved by technology

[0006] A memcapacitor analog equivalent circuit implemented by a current feedback operational amplifier (Current Feedback Operational Amplifier) ​​can accurately simulate the typical q-u (charge-voltage) curve of a memcapacitor with contraction hysteresis characteristics (D.Biolek, V Biolkova.Mutator for transforming memristor into memcapacitor[J].Electron.Lett.,2010,Vol.46,No.21), however, this circuit can only realize the transformation of memristor into memcapacitor, but not memristor, and the circuit It can only be connected to other circuits by grounding

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