Floating memory capacitor and memory inductor simulator based on memory resistor

A technology of memristor and memristor, applied in instruments, static memory, digital memory information, etc., can solve the problem of inability to realize memristor, and achieve the effect of flexible connection

Active Publication Date: 2014-01-22
XIANGTAN UNIV
View PDF1 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] A memcapacitor analog equivalent circuit implemented by a current feedback operational amplifier (Current Feedback Operational Amplifier) ​​can accurately simulate the typical q-u (charge-voltage) curve of a memcapacitor with contraction hysteresis characteristics (D.Biolek,

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Floating memory capacitor and memory inductor simulator based on memory resistor
  • Floating memory capacitor and memory inductor simulator based on memory resistor
  • Floating memory capacitor and memory inductor simulator based on memory resistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0013] Such as figure 1 As shown, the present invention includes a first differential differential current transmitter U1, a second differential differential current transmitter U2, a memristor M, a linear resistance R and a linear reactance element Z, the first differential differential current transmitter The X terminal of U1 is connected to the memristor M and grounded, one input terminal Y2 of the second differential differential current transmitter U2 is grounded, and the other input terminal Y1 is in-phase with the first differential differential current transmitter U1 The current output terminal Z+ is connected to one end of the reactance element Z, the other end of the reactance element Z is grounded, the X end of the second differential differential current transmitter U2 is connected to the resistor R and then grounded, and the second differen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a floating memory capacitor and memory inductor simulator based on a memory resistor. The floating memory capacitor and memory inductor simulator based on the memory resistor comprises a first differential difference current conveyor, a second differential difference current conveyor, the memory resistor, a resistor and a reactance element, wherein the X end of the first differential difference current conveyor is connected with the ground after being connected with the memory resistor, one input end of the second differential difference current conveyor is connected with the ground, the other input end of the second differential difference current conveyor is connected with the in-phase current output end of the first differential difference current conveyor and one end of the reactance element, the other end of the reactance element is connected with the ground, the X end of the second differential difference current conveyor is connected with the ground after being connected with the resistor, the in-phase current output end and the reverse current output end of the second differential difference current conveyor are connected with two input ends of the first differential difference current conveyor respectively. The floating memory capacitor and memory inductor simulator based on the memory resistor has the advantages that the simulator can effectively replace an actual memory capacitor and memory inductor to design a circuit, voltage at the two ends of the memory capacitor and voltage at the two ends of the memory inductor are not limited, and the simulator can be connected with other electronic elements flexibly.

Description

technical field [0001] The invention relates to the technical field of memristors, in particular to a floating memristor and a memristor simulator based on memristors. Background technique [0002] Since the successful realization of memristor in Hewlett-Packard Laboratory in the United States in May 2008, memristor has been widely used in the fields of non-volatile memory, artificial neural network and circuit design. Based on the memristor, Professor Cai Shaotang proposed the concepts of memcapacitor and meminductor in December 2008. The two new memory elements have the same memory function as memristors, but memcapacitors and memristors can store energy, while memristors cannot. The emergence of these memory elements represents a whole new uncharted territory, which has the potential to lead to a series of new revolutions in the field of electronics. [0003] As nanoelectronic components, memcapacitors, memristors, and memristors still exist only in laboratory environme...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C13/00
Inventor 李志军曾以成洪庆辉谭世平余世成
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap