Memcapacitor implementing circuit and implementing method thereof

Abstract

The invention discloses a charge control memcapacitor implementing circuit. The charge control memcapacitor implementing circuit comprises an input alternating voltage source, a charge control voltage source, capacitors and resistors. The invention further discloses an implementing method applicable to the charge control memcapacitor implementing circuit. The method includes the following steps that (1) a first voltage sampler collects capacitor voltage signals V<c>, and output voltage V<Co> of the first voltage sampler is V<C>; (2) a second voltage sampler collects input voltage signals V<in>, and input voltage V<Do> of the second voltage sampler is V<in>; (3) the output voltage V<Co> is input into an integrator for integration; (4) output voltage signals of the integrator are subjected to bias treatment; (5) a multiplying unit is used to multiply the input voltage signals V<in> and biased integration signals; (6) a memcapacitor value is calculated. The charge control memcapacitor implementing circuit and method have the advantages of being capable of changing the working range of a memcapacitor by adjusting a direct current voltage source VDC, the capacitors CL, integrator coefficients and charge integrals according to requirements of application situations.

Description

technical field [0001] The invention relates to a memcapacitor circuit realization technology, in particular to a memcapacitor realization circuit and a method thereof. The invention uses a series of electronic circuits to construct an equivalent circuit with the characteristics of a charge-controlled memcapacitor. Background technique [0002] Professor Cai Shaotang of the University of Berkeley first proposed in 1971 the fourth basic circuit element besides resistors, capacitors and inductors, namely "memristor". Later, the concept of "memristor" was expanded, and other memristive components with memory characteristics were obtained, such as "mem-container" and "mem-sensor". [0003] If the integral value of magnetic flux φ against time is defined as flux integral ρ=∫φdt, and the integral value of charge q against time is defined as charge integral σ=∫qdt, then voltage v, current i, magnetic flux φ, charge q The relationship between the six variables , flux integral ρ and...

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Problems solved by technology

For example, the literature [1] (Biolek, Z., Biolek, D. and Biolkova, V., SPICE modeling of memcapacitor, ELECTRONICS LETTERS, 2010, Vol.46, No.7) proposed a method built under the PSPICE simulation environment Memory container model, literature [2] (He Pengfei, Wang Lidan, Duan Shukai, etc. Simulink model of memory container and its main characteristics analysis, Journal of University of Electronic Science and Technology of China, 2011, 40(5):648-651) in the Simulink simulation environment Memcaptors have been modeled and analyzed, but at this stage, no physical model of the circuit that meets the characteristics of memcapacitors has been built, and it is impossible to carry out research on memcapacitors in practice, which hinders the development and application of memcapacitors.

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