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Polishing composition and polishing method

A composition and compound technology, applied in polishing compositions containing abrasives, chemical instruments and methods, grinding devices, etc., can solve problems such as technical difficulties and no specific disclosure of technical solutions, and achieve the effect of less changes over time

Inactive Publication Date: 2014-02-05
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Although Patent Document 4 discloses a technique for stabilizing the pH of the polishing composition in copper polishing for several minutes, it does not specifically disclose a technical solution for suppressing a change in pH over time over a longer period of time. difficult

Method used

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  • Polishing composition and polishing method
  • Polishing composition and polishing method
  • Polishing composition and polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～9 and comparative example 1～5）

[0115] An oxidizing agent, a pH lowering substance, a pH buffer, a grinding accelerator, a surfactant, and abrasive grains were mixed into water to prepare polishing compositions of Examples 1 to 9. Separately, an oxidizing agent, a pH lowering substance, a compound instead of a pH buffering agent, a polishing accelerator, a surfactant, and abrasive grains were mixed in water to prepare polishing compositions of Comparative Examples 1 to 5. Details of the pH buffering agent or the compound replacing the pH buffering agent in the polishing compositions of Examples 1 to 9 and Comparative Examples 1 to 5 are shown in the "Name" column in the "pH buffering agent or the compound replacing it" column of Table 3. and "Content" column. It should be noted that although not shown in Table 3, the polishing compositions of Examples 1 to 9 and Comparative Examples 1 to 5 all contain 51.6 g / L of 31% by weight hydrogen peroxide aqueous solution (i.e. 16 g / L) as an oxidizing agent. L of hydr...

Embodiment 11～21 and comparative example 11～17）

[0134] An oxidizing agent, a pH lowering substance, a pH control agent, a grinding accelerator, a surfactant, and abrasive grains were mixed into water to prepare polishing compositions of Examples 11 to 21. Separately, an oxidizing agent, a pH lowering substance, a compound instead of a pH controller, a polishing accelerator, a surfactant, and abrasive grains were mixed in water to prepare polishing compositions of Comparative Examples 11 to 17. The details of the pH control agent or the compound that replaces the pH control agent in the polishing compositions of Examples 11 to 21 and Comparative Examples 11 to 17 are as shown in the "pH control agent or the compound that replaces it" column of Table 6 and Table 7. Name" column and "Content" column. It should be noted that, although not shown in Table 6 and Table 7, the polishing compositions of Examples 11 to 21 and Comparative Examples 11 to 17 all contained 51.6 g / L of 31% by weight aqueous hydrogen peroxide solution as an...

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Abstract

Disclosed is a polishing composition containing a substance that lowers the pH of an aqueous solution in the presence of an oxidizing agent, and a pH-buffering agent. The difference in absolute value between the pH of the polishing composition immediately after adding a 31 % by weight hydrogen peroxide solution thereto at 5.16 g per 100 g of the polishing composition and the pH of the polishing composition after leaving to stand for eight days from the addition of hydrogen peroxide is 0.5 or less. Also disclosed is another polishing composition containing a substance that lowers the pH of an aqueous solution in the presence of an oxidizing agent, and a pH-controlling agent. In comparison to the amount of a basic substance in the polishing composition immediately after adding a 31% by weight hydrogen peroxide solution thereto at 5.16 g per 100 ml of the polishing composition, the amount of a basic substance in the polishing composition after leaving to stand for eight days from the addition of hydrogen peroxide is increased by no less than 0.1 mM.

Description

technical field [0001] The present invention relates to a polishing composition used for polishing the surface of a metal-containing substrate (hereinafter referred to as “polishing object”), for example, in a semiconductor integrated circuit (hereinafter referred to as “LSI”). Background technique [0002] With the high integration and high speed of LSI, new microfabrication technology is being developed. Chemical mechanical polishing (hereinafter referred to as "CMP") method is also one of them. In the LSI manufacturing process, especially in the multilayer wiring formation process, the planarization of the interlayer insulating film, contact plug (contact plug) It can be used in the formation of embedded wiring and the formation of embedded wiring. This technique is disclosed in Patent Document 1, for example. [0003] In the formation of contact plugs, tungsten is used as an embedding material and a barrier material for interdiffusion thereof, and the like. In the for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14B24B37/00H01L21/321
CPCC09G1/02C09K3/14B24B37/00H01L21/3212C23F3/06C09K3/1409C09K3/1463H01L21/304
Inventor 玉田修一平野达彦井泽由裕大西正吾
Owner FUJIMI INCORPORATED
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