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Pattern forming method, actinic radiation-sensitive or radiation-sensitive resin composition and resist film

一种感光化射线、树脂组成物的技术，应用在图案形成、感光化射线性或感放射线性树脂组成物及抗蚀剂膜领域，能够解决难寻找抗蚀剂组成物等问题，达到确保粗糙度效能、极佳膜厚度减小的效果

Inactive Publication Date: 2016-08-31
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In practice, however, it is extremely difficult to find an appropriate combination of resist composition, developer, rinse solution, and the like necessary to form a pattern with overall good performance, and further improvements are still required

Method used

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  • Pattern forming method, actinic radiation-sensitive or radiation-sensitive resin composition and resist film
  • Pattern forming method, actinic radiation-sensitive or radiation-sensitive resin composition and resist film
  • Pattern forming method, actinic radiation-sensitive or radiation-sensitive resin composition and resist film

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example

[0712] Hereinafter, the present invention is described in more detail by referring to examples, but the present invention should not be construed as being limited to these examples.

Synthetic example (

[0713]

[0714] In a nitrogen stream, 83.1 parts by mass of cyclohexanone was heated at 80°C. While stirring this solution, a compound containing 11.1 parts by mass of a monomer represented by the following structural formula A, 5.9 parts by mass of a monomer represented by the following structural formula B, 24.9 parts by mass of a monomer represented by the following structural formula C was added dropwise over 4 hours. Monomer, 154.4 parts by mass of cyclohexanone, and 2.30 parts by mass of dimethyl 2,2'-azobisisobutyrate [V-601, manufactured by Wako Pure Chemical Industries, Ltd.] mixture. After the dropwise addition was complete, the solution was stirred at 80°C for an additional 2 hours. The reaction solution was allowed to stand to cool, reprecipitated in a large amount of hexane / ethyl acetate (mass ratio: 8:2) and filtered, and the resulting solid was vacuum-dried to obtain 35.8 parts by mass of the present resin (P-1).

[0715]

[0716] The weight average molec...

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Abstract

A pattern forming method comprising (i) a step of forming a film by an actinic radiation-sensitive or radiation-sensitive resin composition containing (P) a compound having (a) a repeating unit represented by the specific formula resin, and (B) a compound capable of generating an organic acid upon irradiation with actinic rays or radiation; (ii) a step of exposing the film, and (iii) developing the film by using a developer containing an organic solvent to form a negative pattern steps.

Description

technical field [0001] The present invention relates to a pattern forming method, an actinic radiation-sensitive or radiation-sensitive resin composition, and a resist film. In particular to a process suitable for use in the manufacture of semiconductors such as ICs, or in the manufacture of liquid crystal devices or circuit boards such as thermal heads, and further suitable for use in lithography in other photo-fabrication processes Pattern forming method, actinic radiation-sensitive or radiation-sensitive resin composition and resist film. Specifically, the present invention relates to an exposure apparatus suitable for argon fluoride (ArF), ArF immersion type projection exposure apparatus, or extreme ultraviolet (extreme ultra-violet, EUV) exposure apparatus (each of which uses an emission wavelength of 300 nm or less 300 nm deep ultraviolet light source) for pattern formation method of exposure, actinic radiation or radiation sensitive resin composition and resist film. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/038G03F7/004G03F7/039G03F7/32
CPCG03F7/0045G03F7/0046G03F7/0397G03F7/11G03F7/2041G03F7/325G03F7/40G03F7/0047G03F7/0382G03F7/20G03F7/004
Inventor 高桥秀知山口修平片冈祥平白川三千纮吉野文博齐藤翔一
Owner FUJIFILM CORP
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