A graphene/mos 2 /si heterojunction thin film solar cell and its preparation method
A solar cell and heterojunction technology, applied in the field of solar cells, can solve problems such as weak absorption of visible light, low light absorption efficiency, and low conversion efficiency of silicon solar cells, and achieve good transparency and conductivity, large-area uniformity, and improved Effect of Photoelectric Conversion Efficiency
Inactive Publication Date: 2017-01-04
SUZHOU UNIV OF SCI & TECH
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Problems solved by technology
[0005] Si is an indirect bandgap semiconductor, and the light absorption efficiency is very low. In addition, the absorption peak wavelength of silicon is 930 nm, and the radiation in the near-infrared band has good absorption, while the visible light absorption of 300-700 nm is relatively weak.
make silicon solar cells less efficient
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Embodiment 1
[0029] See attached figure 1 , which is the graphene / MoS provided in this example 2 Schematic diagram of the structure of a / Si heterojunction solar cell, which includes graphene electrodes 1, p-MoS 2 Thin film layer 2, n-Si layer 3 and Al electrode 4; figure 1 In the graphene electrode as the anode of the solar cell, p-MoS 2 The pn junction formed by the n-Si layer is the core unit of photoelectric conversion of the solar cell, and the Al electrode is the cathode of the solar cell.
[0030] Growth of ultrathin MoS on n-type silicon wafers (111) by chemical vapor deposition 2 Thin film (several atomic layers), and doping with Al atoms during its growth process to make its conductivity type P-type, and contact with n-type silicon substrate to form a p-n junction. in p-MoS 2 On the surface of the film, a graphene film with a thickness of 10 to 20 atomic layers is grown by chemical vapor deposition. This layer of graphene film and MoS 2 / Si pn junction together constitute g...
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Abstract
The invention relates to a graphene / MoS2 / Si heterojunction thin-film solar cell and a preparation method thereof. The chemical vapor deposition method of gas-carrying liquid-phase MoS2 molecules can better control the flow rate and reaction speed, and obtain ultra-thin, large-area and uniform MoS2 films with small surface roughness, effectively reducing p-MoS2 / The interface characteristics of n-Si heterojunction reduce the leakage current and improve the photoelectric conversion efficiency of solar cells. The large-area uniform, transparent and conductive graphene film obtained by chemical vapor deposition method is used as a transparent conductive electrode. The MoS2 / Si heterojunction has a strong collection effect on photogenerated electrons and holes, which improves the photovoltaic performance of solar cells. effect and conversion efficiency. Under the irradiation of 100 mW white light, the solar cell provided by the invention has an open circuit voltage of 0.98 V, a short circuit current of 4.6 mA, and a light energy conversion efficiency of 4.5%.
Description
technical field [0001] The invention relates to a solar cell, in particular to a graphene / MoS 2 / Si heterojunction solar cell and its preparation method. Background technique [0002] MoS 2 , also known as molybdenum, a black solid substance with metallic luster at room temperature, has excellent chemical stability, thermal stability (melting point 1185°C) and lubricity, and is usually used as a surface coating or lubricant for machinery and cutting tools . Structurally, molybdenum is a hexagonal close-packed graphite layer structure, and the layers are combined by weakly interacting van der Waals forces. Similar to graphite, which is easily exfoliated into monoatomic layer graphene, molybdenite can also be easily exfoliated into monolayer MoS by micromechanical exfoliation. 2 Membranes [S.Bertolazzi, J. Brivio, A. Kis, Stretching and Breaking of Ultrathin MoS 2 , ACSNano, V. 5(12): 9703-9709, 2011.]. The monolayer MoS2 is a regular hexagonal planar structure with S-Mo...
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IPC IPC(8): H01L31/18H01L31/074C23C16/44C23C16/30
CPCC23C16/305C23C16/44H01L31/074H01L31/18Y02E10/50Y02P70/50
Inventor 马锡英
Owner SUZHOU UNIV OF SCI & TECH