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Non-volatile memory and adjustment method thereof

A non-volatile, memory technology, applied in static memory, instruments, etc., can solve the problems of long test time, high test equipment and labor costs, and achieve the effect of reducing test cost and saving test time

Active Publication Date: 2014-02-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This calibration method needs to continuously input instructions from the outside, the test time is long, and the cost of test equipment and labor is relatively high

Method used

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  • Non-volatile memory and adjustment method thereof
  • Non-volatile memory and adjustment method thereof
  • Non-volatile memory and adjustment method thereof

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Embodiment Construction

[0037] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described The embodiments are only some of the embodiments of the present application, but not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0038] The embodiment of the present invention discloses a non-volatile memory, the circuit structure of which is as follows figure 2 As shown, it includes: a configuration information storage unit 201, a control logic unit 202, a test mode control module 203 and a test circuit 204. Compared with the traditional non-volatile memory, it a...

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Abstract

The invention provides a non-volatile memory and an adjustment method thereof. The non-volatile memory comprises a configuration information memory unit, a control logic unit, a test pattern control module and a test circuit. The test circuit is added into the circuit of a traditional non-volatile memory; when the non-volatile memory is powered up, the test circuit begins to work, detects working condition information of the non-volatile memory in real time and generates corresponding adjustment information according to the working condition information, and then adjustment is carried out on the non-volatile memory according to the adjustment information. Since the test circuit does not need to be connected with external equipment for input of an external instruction, the adjustment information can be generated in real time, so automatic adjustment of the non-volatile memory is realized, test time is substantially saved and test cost is reduced.

Description

technical field [0001] The invention relates to a non-volatile memory and a calibration method thereof, belonging to the field of semiconductor memory. Background technique [0002] Due to the influence of factors such as process angle and temperature changes of the working environment, the performance of non-volatile memory will have a certain amount of deviation, that is, the voltage and current in the non-volatile memory circuit will change. Therefore, it is necessary to The volatile memory is calibrated to make the non-volatile memory meet the initial design index requirements. [0003] Traditional non-volatile memory circuit structures such as figure 1 As shown, it mainly includes: storage array (Cell Array), configuration information storage unit (NVR), row decoding circuit (X decoder), column decoding circuit (Y decoder), control logic (Control Logic), input and output buffer (IO Buffer), sense amplifier (SA), address buffer (Address Buffer), test mode control modul...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/56
Inventor 龙爽陈岚陈巍巍杨诗洋
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI