Radio frequency switching circuit of III-V group MOSFET device

Abstract

The invention discloses a radio frequency switching circuit of a III-V group MOSFET device. The radio frequency switching circuit comprises an automatic biasing switching circuit formed by a GaAs MOSFET, the automatic biasing switching circuit is a radio frequency signal channel and is provided with two direct current voltage biasing ends, and each direct current voltage biasing end is connected with an electrostatic protection circuit and used for preventing the switch from being damaged due to the large voltages brought about by static electricity. Meanwhile, each direct current voltage biasing end is further connected with a self boosted circuit and used for boosting of direct current supply voltages. According to the radio frequency switching circuit, the GaAs MOSFET device is used for being manufactured into the switching circuit, the radio frequency switching speed is increased, meanwhile, the gate dynamic range is expanded, low insertion loss is achieved, and the integration of a traditional radio frequency switch is improved.

Description

technical field [0001] The invention relates to the technical field of radio frequency integrated circuits, in particular to a radio frequency switch circuit of III-V MOSFET devices. Background technique [0002] In practical RF switch applications, electrostatic problems have always been one of the factors that cannot be ignored. Because static electricity will bring a short and large voltage, it is extremely easy to cause the switch to fail under strong voltage. Therefore, the electrostatic protection circuit has always been an important factor that needs to be considered by RF switch designers. [0003] On the other hand, in civil radio frequency communication, due to the limited voltage provided by the DC voltage source, it is often difficult to reach the optimal DC bias point for the switching system, so it is necessary to boost the DC bias circuit. Common boost circuits generally The use of CMOS technology has compatibility problems with traditional GaAs technology. ...

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Problems solved by technology

[0003] On the other hand, in civil radio frequency communication, due to the limited voltage provided by the DC voltage source, it is often difficult to reach the optimal DC bias point for the switching system. Therefore, it is necessary to boost the DC bias circuit. Common boost circuits generally Using CMOS technology, there is a compatibility problem with the traditional GaAs technology. At the same time, the circuit generally places the boost circuit on the periphery, which fails to make full use of the chip space area.

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