Electrode flatness evaluation structure and preparation method of capacitive silicon microphone
A silicon microphone and evaluation structure technology, which is applied in the field of capacitive silicon microphone electrode flatness evaluation structure and its preparation, can solve the problems of low product yield rate, inability to improve the yield rate and increase of production process, and achieve the goal of promoting product yield rate Effect
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[0023] Such as figure 2 As shown, the preparation method of the capacitive silicon microphone electrode flatness evaluation structure provided by the first embodiment of the present invention includes the following process steps:
[0024] Step S10 , growing a first dielectric layer on the silicon substrate.
[0025] Step S11 , forming a lower electrode on the first dielectric layer, and the lower electrode is distributed with a plurality of center-symmetrical first alignment elements.
[0026] Specifically, the first alignment member is a circular concave portion or a convex portion, which is evenly distributed on the surface of the lower electrode.
[0027] Step S12 , growing a second dielectric layer on the lower electrode.
[0028] Step S13 , forming an upper electrode on the second dielectric layer, and the upper electrode is distributed with a plurality of center-symmetrical second alignment elements.
[0029] Specifically, the second alignment member is a cross conca...
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