Static chuck

Abstract

The invention provides a static chuck used for fixing a processed workpeice in a plasma processing device; the static chuck comprises a first insulation layer; an electrode positioned in the first insulation layer and used for connecting a controllable DC power so as to generate electrostatic force adsorbing the processed workpiece; a second insulation layer positioned below the first insulation layer; a heater arranged in the second insulation layer, and the heat generated by the heater is used for heating the processed workpiece; a basal body positioned below the second insulation layer and used for supporting the first and second insulation layers; the basal body at least comprises a cooling liquid flow path used for injecting the cooling liquid so as to cool the static chuck; the basal body also comprises a heat resistance unit arranged on an upper portion of the cooling liquid flow path, and the top surface of the heat resistance unit is attached with the bottom surface of the second insulation layer; the heat resistance unit is used for reducing the speed the heat, generated by the heater, flowing to the cooling liquid flow path.

Description

technical field [0001] The present invention relates to semiconductor process equipment, in particular, to an electrostatic chuck for fixing a workpiece subjected to plasma treatment and a plasma processing device having the electrostatic chuck. Background technique [0002] In the manufacturing process of semiconductor equipment, such as etching, deposition, oxidation, sputtering, etc., plasma is usually used to treat the workpiece (wafer) to be processed. In general, in plasma processing apparatuses, methods of generating plasma can be roughly classified into methods using corona (glow) discharge or high-frequency discharge, and methods using microwaves. [0003] For example, in a high frequency discharge type plasma processing apparatus, a workpiece to be processed is placed on an electrostatic chuck that fixes the workpiece by electrostatic force. The existing electrostatic chuck generally includes a first insulating layer and a substrate, and a DC electrode is arranged...

AI Technical Summary

Problems solved by technology

[0006] However, in the process of heating the wafer, since the substrate is usually made of aluminum, its thermal conductivity is high, and the heat dissipated by the second insulating layer is taken away by the cooling liquid in the cooling liquid flow channel, so that the first insulating layer and the wafer cannot Rapid temperature rise affects the process effect of plasma treatment

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