Plasma treatment equipment and its electrostatic chuck

Abstract

The invention relates to a static chuck used in a reaction chamber of a plasma processing device and used for fixing a piece to be machined. The static chuck comprises a first insulating layer, a second insulating layer and a base body and further comprises a thermal insulation unit, wherein the piece to be machined is placed on the first insulating layer, the second insulating layer is located below the first insulating layer, a heater is arranged in the second insulating layer and used for generating heat and heating the piece to be machined through the first insulating layer, the base body is located below the second insulating layer and used for supporting the first insulating layer and the second insulating layer, the base body comprises at least one cooling liquid passageway which is used for injecting cooling liquid to cool the static chuck, and the thermal insulating unit is arranged below the heater and used for lowering the speed at which the heat generated by the heater is taken away by the cooling liquid. According to the static chuck and the plasma processing device, the utilization rate of the heat generated by the heater is improved, and the temperature of the piece to be machined can be rapidly raised.

Description

technical field [0001] The present invention relates to a semiconductor processing technology, more specifically, to a plasma processing device and an electrostatic chuck used in the semiconductor processing technology. Background technique [0002] During processes such as plasma etching or chemical vapor deposition, an electrostatic chuck (ESC for short) is often used to fix, support and transport a wafer (Wafer) waiting to be processed. The electrostatic chuck is installed in the reaction chamber, which uses electrostatic attraction instead of mechanical means to fix the wafer, which can reduce the possible mechanical loss of the wafer, and make the electrostatic chuck and wafer completely contact, which is conducive to heat conduction. [0003] The existing electrostatic chuck generally includes a first insulating layer and a substrate, and a DC electrode is arranged in the first insulating layer, and the DC electrode exerts electrostatic attraction on the wafer. [000...

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Problems solved by technology

[0006] However, in the process of heating the wafer by the heater, since the substrate is usually made of aluminum, its thermal conductivity is relatively high, and only silica gel is used to bond the second insulating layer and the substrate, which cannot effectively prevent the second insulating layer from dissipating heat. It is taken away by the cooling liquid in the cooling liquid channel, so that the first insulating layer and the wafer cannot heat up quickly, which affects the process effect of plasma treatment

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