A method for reducing impurity particles in low-pressure furnace tubes

A low-pressure furnace and impurity technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of multiple clean gases, unfavorable cleaning methods widely used, higher requirements for equipment and processes, etc.

Active Publication Date: 2016-06-08
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

This patent mainly realizes the cleaning function by utilizing the strong cleaning force of the cleaning gas on the impurity particles under a certain pressure, but in this patent, more cleaning gas and greater pressure are required to achieve effective cleaning effect, higher requirements for equipment and processes, which is not conducive to the widespread use of cleaning methods

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  • A method for reducing impurity particles in low-pressure furnace tubes
  • A method for reducing impurity particles in low-pressure furnace tubes
  • A method for reducing impurity particles in low-pressure furnace tubes

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Embodiment Construction

[0032] The present invention adopts the method of raising and lowering the temperature of the low-pressure furnace tube after completing at least one operation of the low-pressure furnace tube, and by controlling the temperature of the low-pressure furnace tube, the rate of temperature rise and fall, and the type of gas, and according to a certain interval time and cleaning time, a constant pressure is introduced. The method of cleaning the gas to achieve the purpose of improving the particle condition of the low-pressure furnace tube, thereby reducing the impurity particles generated during the process of the low-pressure furnace tube, especially reducing the impurity particles on the inner wall of the furnace tube, so that the wafer control wafers produced The impurity particles are reduced by at least 10.

[0033] The inventors have found through research that the main methods of cleaning gas in the prior art to remove impurity particles in the reaction chamber can be divide...

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Abstract

The invention discloses a method for reducing impurity particles in a low-pressure furnace tube. Specifically, the temperature of the low-pressure furnace tube is raised and lowered. The method of passing constant pressure cleaning gas in time to achieve the purpose of improving the condition of the low-pressure furnace tube particles, thereby reducing the impurity particles generated during the low-pressure furnace tube process, especially reducing the impurity particles on the inner wall of the furnace tube. The method of the present invention can effectively improve the condition of impurity particles in the low-pressure furnace tube. Compared with the same deposition process, the wafer-controlled impurity particles produced by it are significantly reduced, which solves the problem caused by the residual impurity particles after multiple deposition processes. To solve the problem of product defects, extend the batches of safe and stable operation of low-pressure furnace tubes, improve the stability of related diffusion processes, reduce the impact of defects on products, and improve production efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for reducing impurity particles in a low-pressure furnace tube. Background technique [0002] Today's semiconductor manufacturing process requires higher and higher precision, so it requires the integration of chips to increase and the size of devices to shrink. In the furnace tube diffusion process (such as AA-SINdeposition, Spacerdeposition, Polydeposition), the particles remain on the gas pipeline and the inner wall of the furnace tube. When working in multiple batches for a long time, it will increase the impurity particles falling to the wafer during the process Due to the above possibility, the introduction of pollution sources such as particles in the wafer production process may cause open circuit or disconnection of the circuit, resulting in product defects, thereby affecting the manufacture of devices in subsequent processes. Therefore, the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44
Inventor 吴加奇王智苏俊铭张旭昇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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