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Method for decreasing impurity particles in low pressure furnace tube

A low-pressure furnace and impurity technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of higher requirements for equipment and processes, more clean gases, and unfavorable cleaning methods.

Active Publication Date: 2014-03-19
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This patent mainly realizes the cleaning function by utilizing the strong cleaning force of the cleaning gas on the impurity particles under a certain pressure, but in this patent, more cleaning gas and greater pressure are required to achieve effective cleaning effect, higher requirements for equipment and processes, which is not conducive to the widespread use of cleaning methods

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  • Method for decreasing impurity particles in low pressure furnace tube
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  • Method for decreasing impurity particles in low pressure furnace tube

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Embodiment Construction

[0032] The present invention adopts the method of raising and lowering the temperature of the low-pressure furnace tube after completing at least one operation of the low-pressure furnace tube, and by controlling the temperature of the low-pressure furnace tube, the rate of temperature rise and fall, and the type of gas, and according to a certain interval time and cleaning time, a constant pressure is introduced. The method of cleaning the gas to achieve the purpose of improving the particle condition of the low-pressure furnace tube, thereby reducing the impurity particles generated during the process of the low-pressure furnace tube, especially reducing the impurity particles on the inner wall of the furnace tube, so that the wafer control wafers produced The impurity particles are reduced by at least 10.

[0033] The inventors have found through research that the main methods of cleaning gas in the prior art to remove impurity particles in the reaction chamber can be divide...

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Abstract

The invention discloses a method for decreasing impurity particles in a low pressure furnace tube. Specifically, heating-cooling treatment is carried out on the low pressure furnace tube, the temperature of the low pressure furnace tube, the heating-cooling rate and the gas type are controlled, and a constant pressure cleaning gas is introduced according to certain interval time and cleaning time so as to reach the purpose of improving low pressure furnace tube particle status, thereby reducing the impurity particles generated in a low pressure furnace tube process, especially reducing the impurity particles on the furnace tube inner wall. The method provided by the invention can effectively improve the impurity particle status of the low pressure furnace tube, and compared with a similar deposition process, the produced wafer control piece impurity particles are significantly decreased, thus solving the product defect problem caused by the impurity particles remaining after multiple deposition processes, prolonging the safe and stable operation batch of the low pressure furnace tube, improving the stability of a relevant diffusion technology, reducing the defect influence on the product, and enhancing the production efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for reducing impurity particles in a low-pressure furnace tube. Background technique [0002] Today's semiconductor manufacturing process requires higher and higher precision, so it requires the integration of chips to increase and the size of devices to shrink. In the furnace tube diffusion process (such as AA-SIN deposition, Spacer deposition, Poly deposition), the particles remain on the gas pipeline and the inner wall of the furnace tube. When working in multiple batches for a long time, it will increase the drop of impurity particles during the process The possibility of contamination on the wafer, the introduction of pollution sources such as particles during the wafer production process, may cause open or disconnected circuits, resulting in product defects, thereby affecting the manufacture of devices in subsequent processes. Therefore, the in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
Inventor 吴加奇王智苏俊铭张旭昇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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