Resistance change element and manufacturing method therefor

Abstract

A resistance change element has a first electrode (107), a second electrode (105), and a resistance change layer (106) provided interposed between the first and second electrodes (107, 105) so as to be in contact with the first and second electrodes (107, 105) and in which a resistance value reversibly changes on the basis of an applied electrical signal. The resistance change layer (106) is constituted by a layered structure of a first resistance change layer (106b) constituted by a first oxygen-deficient metal oxide, and a second resistance change layer (106a) constituted by a second transition metal oxide in which the degree of oxygen deficiency is lower than the degree of oxygen deficiency in the first resistance change layer (106b). The second electrode (105) has just one needle-shaped section at the interface with the second resistance change layer (106a), and the second resistance change layer (106a) is provided between the first resistance change layer (106b) and the second electrode (105) so as to be in contact with the first resistance change layer (106b) and the second electrode (105) and so as to cover the needle-shaped section.

Description

technical field [0001] The present invention relates to a resistance variable element, and more particularly to a resistance variable resistance element whose resistance value changes reversibly according to an applied electric signal, and a method for manufacturing the same. Background technique [0002] In recent years, with the advancement of digital technology for electrical equipment, there has been an increasing demand for large-capacity, non-volatile memory devices in order to store data such as music, images, and information. As a countermeasure to meet such demands, attention has been paid to nonvolatile memory devices (hereinafter referred to as ReRAM) that use a variable resistance element whose resistance value changes in response to an applied electrical signal in a memory cell and maintains that state continuously. . This is because the variable resistance element has features such as relatively simple structure, easy densification, and easy compatibility with...

AI Technical Summary

Problems solved by technology

Such variation in operating characteristics impairs the operating stability and reliability of a semiconductor memory device constructed using a variable resistance element.

In addition, since it is necessary to add a margin as a countermeasure against such variations to the design dimensions of the variable resistance element, miniaturization and increase in capacity of memory devices are hindered.

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