Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

One-time etched-before-plated metal frame subtraction embedded chip inverted flat pin structure and technological method thereof

A process method and metal plating technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of lack of system functions of metal lead frames, and achieve the effects of improving heat dissipation, reducing costs, and small size

Active Publication Date: 2014-03-26
JCET GROUP CO LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to overcome the above-mentioned shortcomings, provide a kind of first etch first and then plate the metal frame subtractive embedded chip flip-chip flat pin structure and process method, which can solve the problem of lack of system function in the traditional metal lead frame

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • One-time etched-before-plated metal frame subtraction embedded chip inverted flat pin structure and technological method thereof
  • One-time etched-before-plated metal frame subtraction embedded chip inverted flat pin structure and technological method thereof
  • One-time etched-before-plated metal frame subtraction embedded chip inverted flat pin structure and technological method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] The process method of a kind of metal frame subtraction embedded chip flip-chip flat pin structure is as follows in the present invention:

[0050] Step 1. Take the metal substrate

[0051] see figure 1 , take a piece of metal substrate with appropriate thickness, the material of this plate is mainly metal material, and the material of metal material can be copper, iron, galvanized, stainless steel, aluminum or metal that can achieve conductive function Material or non-all-metal material, etc., the choice of thickness can be selected according to product characteristics.

[0052] Step 2. Paste photoresist film

[0053] see figure 2 , A photoresist film that can be exposed and developed is pasted on the front and back of the metal substrate to protect the subsequent etching process. The photoresist film can be a dry photoresist film or a wet photoresist film.

[0054] Step 3. Remove part of the photoresist film from the surface of the metal substrate

[0055] see ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a flip chip one-time etching combined type flat pin metal frame structure and a technological method thereof. The metal frame structure is characterized in that a metal base plate frame is included, base islands and pins are arranged inside the metal base plate frame, and chips are arranged on the back faces of the base islands and the step surfaces of the pins through underfill adhesives; the areas on the peripheries of the base islands, the areas between the base islands and the pins, the areas between the pins, the areas on the upper portions of the base islands and the pins, the areas on the lower portions of the base islands and the pins, and the outsides of the chips are all coated with molding compounds in a sealing mode; the molding compounds are flush with the upper surface and the lower surface of the metal base plate frame; anti oxidation layers are plated on or organic solderability preservative (OSP) wraps the front faces of the base islands, the front faces and the back faces of the pins and the surface of the metal base plate frame. The metal frame structure and the technological method thereof have the advantage of being capable of solving the problem that an object can not be embedded into a thick plate in a traditional metal lead frame, so that the functionality and application performance of the metal lead frame are limited.

Description

technical field [0001] The invention relates to a flip-chip chip flip-chip structure and a process method for firstly etching and then metal-plated frame subtraction-buried chip flip-chip flat feet. It belongs to the technical field of semiconductor packaging. Background technique [0002] There are two main types of conventional four-sided flat leadless metal leadframe structures: [0003] One is the four-sided flat no-lead package (QFN) lead frame. The lead frame of this structure is composed of a copper metal frame and a high temperature resistant adhesive film (such as Figure 10 shown). [0004] One is the pre-encapsulated quad flat no-leads (pQFN) leadframe, the leadframe structure of this structure includes the lead and the base island, and the etched area between the lead and the base island is filled with plastic encapsulant (such as Figure 11 shown). [0005] The above conventional metal lead frame has the following disadvantages: [0006] 1. The traditional m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/495H01L23/31H01L21/56H01L21/60
CPCH01L2224/73204
Inventor 梁志忠梁新夫王亚琴
Owner JCET GROUP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com