Mask set and method for detecting alignment precision by utilizing mask set

A technology for overlay accuracy and mask, which is applied in the field of photolithography and can solve problems such as inability to detect overlay accuracy, low work efficiency, and inability to detect mask offset.

Active Publication Date: 2014-04-09
HEFEI BOE OPTOELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) When the measurement coordinate system cannot be established on the test equipment, the overlay accuracy cannot be detected
[0006] (2) When the Overlay Mark part is missing, the overlay accuracy cannot be accurately detected
[0007] (3) When the subsequent mask plate is rotated relative to the previous mask plate, the rotation of the mask plate cannot be detected, and accordingly the of

Method used

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  • Mask set and method for detecting alignment precision by utilizing mask set
  • Mask set and method for detecting alignment precision by utilizing mask set
  • Mask set and method for detecting alignment precision by utilizing mask set

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Embodiment Construction

[0051] Embodiments of the present invention provide a mask set and a method for detecting overlay accuracy using the mask set to provide a new type of mask set and a method for using the mask set to detect overlay accuracy.

[0052] An embodiment of the present invention provides a novel mask set, including: a first mask and at least one second mask; a first set of markings is set on the first mask, and a second set of markings is set on the second mask Engraving marks, the first set of engraving marks and the second set of engraving marks are line segments with a set length, and an initial position is set for the first set of engraving marks and the second set of engraving marks, which corresponds to when there is no engraving deviation in lithography alignment position. Use microscopic equipment (such as a microscope, etc.) to detect whether the second overlay mark deviates from the initial position relative to the first overlay mark. If so, there is an overlay deviation, ot...

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PUM

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Abstract

The invention discloses a mask set and a method for detecting the alignment precision by utilizing the mask set, and provides a novel mask set and a method for detecting the alignment precision by utilizing the mask set. The mask set comprises a first mask and at least one second mask; each second mask comprises one or more point positions for detecting the alignment precision; the area, corresponding to the point position, of the first mask is provided with at least one first alignment mark, and the first alignment mark is a line segment with a set length; the area, corresponding to the point positions, of the second mask is provided with second alignment marks corresponding to the first alignment marks one by one, and each second alignment mark is a line segment with a set length; the projection of the first alignment marks on the first mask is intersected with that of the second alignment marks on the first mask, and the projection of the first alignment mark and the projection of the second alignment mark form a set angle.

Description

technical field [0001] The invention relates to the technical field of photolithography technology, in particular to a mask plate set and a method for detecting overlay accuracy by using the mask plate set. Background technique [0002] Photolithography is an important step in the manufacturing process in the semiconductor field. Photolithography is the process of transferring the pattern on the mask (Mask) to the target substrate through the steps of alignment, exposure and development. A product generally includes multi-layer functional film layers, and a multi-layer photolithography process is required to complete the entire product manufacturing process. It is particularly important to align the photolithographic pattern of the current functional film layer with the photolithographic pattern of the previous functional film layer. Overlay Accuracy refers to the positional alignment deviation of lithographic patterns between different functional film layers, and the size...

Claims

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Application Information

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IPC IPC(8): G03F1/44G03F7/20
Inventor 张玉虎汪雄李丽丽
Owner HEFEI BOE OPTOELECTRONICS TECH
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