Self-biased non-homogeneous microwave ferromagnetic thin film material and preparation method thereof

Abstract

The invention belongs to the technical field of microwave ferromagnetic materials, and relates to a self-biased non-homogeneous microwave ferromagnetic thin film material and a preparation method thereof. The preparation method includes the steps that at room temperature, a ferromagnetic base material M is used as a ferromagnetic mother material target, a doping element D is used as a doping element target, a single-crystal Si substrate is used as a substrate, the length direction of the substrate is the radial direction of a round sample rotary disc, the substrate directly faces the ferromagnetic mother material target, the target position of the doping element target is deviated from one end of the center of the substrate by 5-10cm, after the vacuum pressure of a magnetron sputtering vacuum chamber is lower than 5.0*10-6 Torrs, Ar gas or N2 gas is led into the magnetron sputtering vacuum chamber for sputtering, and then the self-biased non-homogeneous microwave ferromagnetic thin film material is obtained. The preparation method of the self-biased non-homogeneous microwave ferromagnetic thin film material is simple and convenient to operate, and the prepared thin film material is stable in performance, high in ferromagnetic resonance frequency and wide in application range.

Description

Technical field: [0001] The invention belongs to the technical field of microwave ferromagnetic materials, and relates to a heterogeneous ferromagnetic thin film material and a preparation process thereof, in particular to a self-biased heterogeneous microwave ferromagnetic thin film material and a preparation method thereof. Background technique: [0002] At present, ferromagnetic thin film materials are widely used in RF / microwave components such as DC-DC converters, filters, phase shifters, isolators and couplers [see literature [1] C.S.Kim, S.Bae, H.J.Kim , S.E.Nam, H.J.Kim, IEEE Trans.on Magn., 37(2001) 2894-2896; [2] M.Yamaguchi, K.Yamada, and K.H.Kim, IEEE Trans.on Magn., 42(2006) 3341- 3343; [3] Y. Hayakawa, A. Makino, H. Fujimori, and A. Inoue, J. Appl. Phys., 81(1997) 3747-3752; [4] B. Orlando, A.–S. Royer , and B.Viala,IEEE Trans.on Magn.,42(2001)3371-3373.], in these application fields, the radio frequency / microwave ferromagnetic properties of ferromagnetic thin...

AI Technical Summary

Problems solved by technology

Magnetic field heat treatment or magnetic field in-situ deposition methods are widely used, but the obtained magnetic anisotropy field is small, usually less than 50Oe, which makes the ferromagnetic resonance frequency of the film generally lower than 3GHz [see literature [8] S.X.Wang, N.X.Sun , M.Yamaguchi, and S.Yabukami, Nature, vol.407(2000) 150–151; [9] J.Shim, J.Kim, S.H.Han, H.J.Kim, K.H.Kim, and M.Yamaguchi, J.Magn .Magn.Mater.,290–291(2005)205–208;[10]C.J.Jiang,D.S.Xue,D.W.Guo,and X.L.Fan,J.Appl.Phys.,106(2009)103910;[11] J.C.Sohn, D.J.Byun, and S.H.Lim, J.Magn.Magn.Mater.,272–276(2004)1500–1502.]; Inclined sputtering and target sputtering can obtain a magnetic anisotropy field of 200-300Oe , but the thickness of the film is not uniform, which seriously affects the use of the film ; [13] W.D.Li, O.Kitakami, and Y.Shimada, J.Appl.Phys., 83(1998) 6661; [14] E.Yu, J.S.Shim, I.Kim, J.Kim, S.H.Han, H.J.Kim, K.H.Kim, and M.Yamaguchi, IEEE Trans. Magn., 41(2005) 3259–3261; [15] A.Iljinas, J.Dudonis, R. and A. Nonlinear Analysis Modeling and Control,10(2005)57–64.]; the exchange coupling between ferromagnetic-antiferromagnetic or ferromagnetic-ferromagnetic thin films can generate a large magnetic anisotropy field, but the exchange coupling It often only occurs between extremely thin films, and it is difficult for the film to achieve a practical thickness [see literature [9] J.Shim, J.Kim, S.H.Han, H.J.Kim, K.H.Kim, and M.Yamaguchi, J.Magn .Magn.Mater., 290–291(2005) 205–208; [16] M.Sonehara, T.Sugiyama, T.Sato, K.Yamasawa, and Y.Miura, IEEE Trans.Magn., 41(2005) 3511–3513; [17] C.Pettiford, A.Zeltser, S.D.Yoon, V.G.Harris, C.Vittoria, and N.X.Sun, IEEE Trans. Magn., 42(2006) 2993–2995; [18] H.Le Gall , J. Ben Youssef, N. Vukadinovic, and J. Ostorero, IEEE Trans. Magn., 38(2002) 2526–2528.]